PROFILE

After graduation in Electronic Engineering at the University of Roma "Tor Vergata", Fabio Sacconi has obtained in 2003 the Ph.D. degree in in Electronic Engineering in the same university. His research is mainly focused on numerical simulations of semiconductor devices and in the developing of the multiscale simulation software tiberCAD.
Since December 2008 he is CEO of the Tor Vergata University spin-off tiberlab s.r.l.

RESEARCH ACTIVITY

Here are some topics of his research activity:

• Theoretical study of tunneling properties through SiO₂ and high-k oxides MOS structures

• Electronic and optical properties of nitride-based nanostructures: nanorod LEDs, quantum dots and quantum wells

• Multiscale coupling of tight-binding atomistic models and quantum approaches based on envelope function approximation (EFA) with a Poisson-drift-diffusion scheme for charge and transport calculation in nanodevices

PUBLICATIONS

Main publications

F.Sacconi, M. Auf Der Maur and A. Di Carlo "Optoelectronic properties of nanocolumn InGaN/GaN LEDs" Submitted to IEEE Trans. Electron Devices (2012)

M. Auf Der Maur, G.Penazzi, G.Romano, F.Sacconi, A. Pecchia and A. Di Carlo "The Multiscale Paradigm in Electronic Device Simulation" IEEE Trans. Electron Devices, VOL. 58, NO. 5, p.1425 (2011)

G. Penazzi, A. Pecchia, F. Sacconi and A. Di Carlo "Calculation of optical properties of a quantum dot embedded in aGaN/AlGaN nanocolumn" Superlattices and Microstructures Volume 47, Issue 1, January 2010, Pages 123-128

F.Stokker-Cheregi, A.Vinattieri, E.Feltin, D.Simeonov, J.-F- Carlin, R.Buttè, N.Grandjean, F.Sacconi, M. Povolotskyi, A. Di Carlo, M. Gurioli "Quantum confinement dependence of the energy splitting and recombination dynamics of A and B excitons in a GaN/AlGaN quantum well" Physical Rev. B, 79, 245316 (2009)

F. Sacconi, J.M.Jancu, M. Povolotskyi, A. DiCarlo "Full-band tunneling in high-k oxide MOS structure IEEE Transactions on Electron Devices, VOL. 54, NO. 12, p.3168 (2007)