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Fabio Sacconi

PostDoc fellow
Nano&Optoelectronics group (OLAB)

Dept. Electronics Engineering
University of Rome "Tor Vergata"
via del Politecnico 1, 00133 Roma (Italy)

Tel   +39 0672597781
Fax +39 062020519

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After graduation in Electronic Engineering at the University of Roma "Tor Vergata", Fabio Sacconi has obtained in 2003 the Ph.D. degree in in Electronic Engineering in the same university. His research is mainly focused on numerical simulations of semiconductor devices and in the developing of the multiscale simulation software tiberCAD.
Since December 2008 he is CEO of the Tor Vergata University spin-off tiberlab s.r.l.


Here are some topics of his research activity:

  • Theoretical study of tunneling properties through SiO2 and high-k oxides MOS structures
SiO2 and high-k oxides MOS structure


  • Electronic and optical properties of nitride-based nanostructures: nanorod LEDs, quantum dots and quantum wells

  • Multiscale coupling of tight-binding atomistic models and quantum approaches based on envelope function approximation (EFA) with a Poisson-drift-diffusion scheme for charge and transport calculation in nanodevices


Main publications

F.Sacconi, M. Auf Der Maur and A. Di Carlo "Optoelectronic properties of nanocolumn InGaN/GaN LEDs" Submitted to IEEE Trans. Electron Devices (2012)

M. Auf Der Maur, G.Penazzi, G.Romano, F.Sacconi, A. Pecchia and A. Di Carlo "The Multiscale Paradigm in Electronic Device Simulation" IEEE Trans. Electron Devices, VOL. 58, NO. 5, p.1425 (2011)

G. Penazzi, A. Pecchia, F. Sacconi and A. Di Carlo "Calculation of optical properties of a quantum dot embedded in aGaN/AlGaN nanocolumn" Superlattices and Microstructures Volume 47, Issue 1, January 2010, Pages 123-128

F.Stokker-Cheregi, A.Vinattieri, E.Feltin, D.Simeonov, J.-F- Carlin, R.Buttè, N.Grandjean, F.Sacconi, M. Povolotskyi, A. Di Carlo, M. Gurioli "Quantum confinement dependence of the energy splitting and recombination dynamics of A and B excitons in a GaN/AlGaN quantum well" Physical Rev. B, 79, 245316 (2009)

F. Sacconi, J.M.Jancu, M. Povolotskyi, A. DiCarlo "Full-band tunneling in high-k oxide MOS structure IEEE Transactions on Electron Devices, VOL. 54, NO. 12, p.3168 (2007)


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