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Amir Hossein Fallahpour

Ph. D. Student
Nano&Optoelectronics group (OLAB)

Dept. Electronics Engineering
University of Rome "Tor Vergata"
via del Politecnico 1, 00133 Roma (Italy)

Tel   +39 0672597777
Fax +39 0672597939

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Amir Hosssein Fallahpour was born in Isfahan, Iran, in 1981. He received the Master degree in Microelectronics and Telecommunication Engineering from University of Technology Malaysia in 2009. He was a member of Computational Nanoelectronics (CoNE) Research Group in UTM University.


He is currently a member of OLABs research group at the Department of Electronics Engineering of the University of Rome "Tor Vergata". His main research interest is in the field of photovoltaic mainly focus on Modelling and Simulation of organic bulk hetrojunction solar cells which recently is the emerging area of renewable energy research area.




[1] A.H. Fallahpour, G. Ulisse, M. Auf der Maur, A. Di Carlo, and F. Brunetti. “3D Simulation and Optimization of Organic Solar Cell with Periodic Back Contact Grating Electrode”, IEEE Journal of photovoltaics,2014,(Accepted) (IF:3.0)


[2] A. H. Fallahpour, A. Gagliardi, F. Santoni, D. Gentilini, A. Zampetti, M. Auf der Maur, et al., "Modeling and simulation of energetically disordered organic solar cells," Journal of Applied Physics, vol. 116, p. 184502, 2014 (IF:2.21)


[3] A. H. Fallahpour, A. Gagliardi, D. Gentilini, A. Zampetti, F. Santoni, M. Auf der Maur, et al., "Optoelectronic simulation and thickness optimization of energetically disordered organic solar cells," Journal of Computational Electronics, vol. 13, pp. 933-942, 2014. (IF:1.372)


[4] Andrea Zampetti,* Amir Hossein Fallahpour,* Martina Dianetti, Luigi Salamandra, et al., "Influence of the interface material layers and semiconductor energetic disorder on the open circuit voltage in polymer solar cells", Journal of Polymer Science Part B: Polymer Physic, (Under revision) (IF:3.803)


[5] A. H. Fallahpour, M. Auf der Maur, D. Gentilini, A. Gagliardi and A. Di Carlo, “Systematic Study of the Power Conversion Efficiency and Device Operation of Organic Tandem Solar Cells”,(Ready to Submit)


Book Chapter


Amir Hossein Fallahpour and Mohammad Taghi Ahmadi, “Silicon Nanowire Field Effect Transistor Modeling”,In book Advanced Nanoelectronics, CRC Press Taylor & Francis Inc, ISBN 9781439856802 ,Dec 2012



Co-Author Papers


[1] Mohammad Taghi Ahmadi, Zaharah Johari , Amir Hossein Fallahpour and Razali Ismail “Graphenee Nanoribon conductance model in parabolic band structure” , Journal of nanomaterial, Volume 2010, Article ID 753738,doi:10.1155/2010/753738 (IF:1.611)


[2] Mohammad Taghi Ahmadi, Amir Hossein Fallahpour,Vahid Kohdaragh,Razali Ismail, “P-Type Silicon Nanowire Transistor Modeling”, International Journal of Recent Trends in Engineering (IJRTE),Issue on Electrical & Electronics,ISSN 1797-9617 Vol 2, No. 6, Nov.2009


[3] Mohammad Taghi Ahmadi, Amir Hossein Fallahpour, Vahid Kouhdaragh, Razali Ismail, “Band structure effect on Carbon Nanotube Fermi Energy”, International Review of PHYSICS, Vol. 3. n. 4, pp. 224,


[4] Mohammad Taghi Ahmadi, Amir Hossein Fallahpour, Javad Allahdadian, Razali Ismail, “Analytical Study of Carriers in Silicon Nanowires”, MASAUM Journal of Basic and Applied Sciences Vol.1, No. 2 September 2009


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