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THE NANO OPTOELECTRONICS GROUP

ELECTRONIC DEVICE SIMULATIONS

Details
Category: RESEARCH

HEMTHigh electron mobility transistors (HEMTs) and heterojunction bipolar ransistors (HBTs) based on GaAs, GaN, InP are the most widely used microwave devices for low noise and power applications. We performed both Monte Carlo and Drift-Diffusion approaches to investigate:

  • Impact-ionization regime
  • Reliability
  • RF response
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