NITRIDE BASED SEMICONDUCTOR

THE NANO OPTOELECTRONICS GROUP

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NITRIDE BASED SEMICONDUCTOR

Details: Category: RESEARCH

GaN Gallium Nitride and related material are wide band gap semiconductor suitable for light emitters in the green-ultraviolet region and for high power microwave transistors. Our theoretical investigation deals with:

Optical and electronic properties of nitride nanostructures
Screening of polarization fields
Nitride LASERs and LEDs
Nitride-based high electron mobility transistors

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