Publications

Quantum transport with the generalized Monte Carlo approach: the effect of non-diagonal injection
R.P. Zaccaria F. Rossi A. Di Carlo P. Lugli
7th International Workshop on Computational Electronics. Book of Abstracts. IWCE (Cat. No.00EX427), , pp. 135 - (2000)
Monte Carlo methods;quantum interference phenomena;semiconductor device models;

Self-consistent full-band modeling of quantum semiconductor nanostructures
F. Chirico A. Di Carlo P. Lugli
7th International Workshop on Computational Electronics. Book of Abstracts. IWCE (Cat. No.00EX427), , pp. 39 - 40 (2000)
pseudopotential methods;semiconductor device models;

Semiconductor nanostructures
A. Di Carlo
Physica Status Solidi B, 217, pp. 703 - 22 (2000/01/01)
ab initio calculations;band structure;nanostructured materials;optical properties;semiconductor quantum wells;semiconductor quantum wires;semiconductor superlattices;tight-binding calculations;

Spontaneous polarization and piezoelectric field in GaN/Al_0.15Ga_0.85N quantum wells: Impact on the optical spectra
R. Gingolani A. Botchkarev H. Tang H. Morkoc G. Traetta G. Coli M. Lomascolo A. Di Carlo F.D. Sala P. Lugli
Physical Review B (Condensed Matter), 61, pp. 2711 - 15 (2000/01/15)
aluminium compounds;dielectric polarisation;electro-optical effects;excitons;gallium compounds;III-V semiconductors;photoluminescence;piezoelectricity;red shift;semiconductor quantum wells;

Tailoring the breakdown voltage in high electron mobility transistor: theoretical and experimental results
A. Sleiman A. Di Carlo L. Tocca R. Fiordiponti P. Lugli G. Zandler
GAAS 2000. Conference Proceedings, , pp. 4 (2000)
gallium arsenide;high electron mobility transistors;hole density;III-V semiconductors;impact ionisation;Monte Carlo methods;ohmic contacts;semiconductor device breakdown;semiconductor device models;

Theoretical study, modeling and simulation of SL quantum cascade lasers
S. Tortora F. Compagnone A. Di Carlo P. Lugli
Physica E, 7, pp. 20 - 4 (2000/04)
aluminium compounds;electroluminescence;gallium arsenide;III-V semiconductors;indium compounds;Kronig-Penney model;laser beams;laser theory;Monte Carlo methods;quantum well lasers;semiconductor superlattices;

Well-width dependence of the ground level emission of GaN/AlGaN quantum wells
A. Bonfiglio M. Lornascolo G. Traetta R. Cingolani A. Di Carlo F. Della Sala P. Lugli A. Botchkarev H. Morkoc
Journal of Applied Physics, 87, pp. 2289 - 92 (2000/03/01)
aluminium compounds;gallium compounds;ground states;III-V semiconductors;interface states;interface structure;internal stresses;photoluminescence;SCF calculations;semiconductor quantum wells;tight-binding calculations;wide band gap semiconductors;

AlN and GaN epitaxial heterojunctions on 6H-SiC(0001): Valence band offsets and polarization fields
A. Rizzi R. Lantier F. Monti H. Luth F.D. Sala A. Di Carlo P. Lugli
Journal of Vacuum Science & Technology B (Microelectronics and Nanometer Structures), 17, pp. 1674 - 81 (1999/07)
aluminium compounds;core levels;dielectric polarisation;gallium compounds;III-V semiconductors;piezoelectric semiconductors;semiconductor epitaxial layers;semiconductor heterojunctions;surface states;tight-binding calculations;valence bands;wide band gap semiconductors;X-ray photoelectron spectra;

Breakdown triggering in PM-HEMTs studied by means of Monte Carlo simulator
A. Di Carlo L. Rossi P. Lugli G. Meneghesso E. Zanoni
ESSDERC'99. Proceedings of the 29th European Solid-State Device Research Conference, , pp. 548 - 51 (1999)
high electron mobility transistors;impact ionisation;Monte Carlo methods;Poisson equation;semiconductor device breakdown;semiconductor device models;

Carrier screening and polarization fields in nitride-based heterostructure devices
Fabio Della Sala Aldo Di Carlo Paolo Lugli Roberto Cingolani G. Coli M. Lomascolo A. Botchkarev H. Tang H. Morkoc
Physica B: Condensed Matter, 272, pp. 397 - 401 (1999)
Semiconductor quantum wells;Semiconducting gallium compounds;Semiconducting aluminum compounds;Charge carriers;Light scattering;Light polarization;

Effects of macroscopic polarization in III-V nitride multiple quantum wells
V. Fiorentini F. Bemardini F. Della Sala A. Di Carlo P. Lugli
Physical Review B (Condensed Matter), 60, pp. 8849 - 58 (1999/09/15)
dielectric polarisation;III-V semiconductors;interface states;nanostructured materials;SCF calculations;semiconductor quantum wells;tight-binding calculations;

Experimental and theoretical studies of near-breakdown phenomena in GaAs-based heterostructure FETs
A. Sleiman L. Rossi A. Di Carlo L. Tocca A. Bonfiglio M. Brunori P. Lugli G. Zandler G. Meneghesso E. Zanoni C. Canali A. Cetronio M. Lanzieri M. Peroni
GAAS 99. Conference Proceedings, , pp. 5 (1999)
electroluminescence;gallium arsenide;III-V semiconductors;impact ionisation;microwave field effect transistors;minority carriers;Monte Carlo methods;semiconductor device breakdown;

Micromachined pressure sensors with Al_xGa_1-xAs/GaAs- and InAs/AlSb/GaSb-resonant tunneling diodes
K. Mutamba A. Sigurdardottir A. Vogt J. Pfeiffer U. Behner A. Di Carlo H.L. Hartnagel
1999 57th Annual Device Research Conference Digest (Cat. No.99TH8393), , pp. 64 - 5 (1999)
aluminium compounds;etching;gallium arsenide;gallium compounds;III-V semiconductors;indium compounds;membranes;micromachining;microsensors;pressure sensors;resonant tunnelling diodes;

Modelling of semiconductor nanostructured devices within the tight-binding approach
P. Lugli A. Di Carlo A. Reale
Journal of Physics: Condensed Matter, 11, pp. 6035 - 43 (1999/08/09)
high electron mobility transistors;quantum well devices;SCF calculations;semiconductor device models;semiconductor optical amplifiers;tight-binding calculations;

Optical polarization grating in semiconductors induced by exciton polaritons
A.V. Kavokin G. Malpuech A. Di Carlo M. Vladimirova P. Lugli F. Rossi
Physical Review B (Condensed Matter), 60, pp. 15554 - 7 (1999/12/15)
excitons;high-speed optical techniques;light polarisation;polaritons;semiconductor heterojunctions;

Photon Bloch oscillations in laterally confined Bragg mirrors
Alexey Kavokin Guillaume Malpuech Aldo Di Carlo Paolo Lugli Fausto Rossi
Physica B: Condensed Matter, 272, pp. 491 - 494 (1999)
Photoemission;Light transmission;Photons;Porous silicon;Light scattering;Dielectric materials;

Study of gain compression mechanisms in multiple-quantum-well In_1-xGa_xAs semiconductor optical amplifiers
A. Reale A. Di Carlo D. Campi C. Cacciatore A. Stano G. Fornuto
IEEE Journal of Quantum Electronics, 35, pp. 1697 - 703 (1999/11)
gallium arsenide;III-V semiconductors;indium compounds;laser theory;light polarisation;optical pumping;quantum well lasers;semiconductor device models;semiconductor optical amplifiers;

Theoretical study and simulation of electron dynamics in quantum cascade lasers
S. Tortora F. Compagnone A. Di Carlo P. Lugli M.T. Pellegrini M. Troccoli G. Scamarcio
Physica B: Condensed Matter, 272, pp. 219 - 222 (1999)
Semiconducting indium gallium arsenide;Semiconducting aluminum compounds;Electronic structure;Monte Carlo methods;Computer simulation;Electroluminescence;Semiconductor device models;

Tight-binding design of intersubband transitions in InGaAs/AlAs quantum heterostructures grown pseudomorphically on InP
J.-M. Jancu F. Beltram R. Scholz A. Di Carlo
Superlattices and Microstructures, 25, pp. 351 - 5 (1999)
aluminium compounds;gallium arsenide;III-V semiconductors;indium compounds;interface states;optical properties;semiconductor heterojunctions;tight-binding calculations;

A combined Monte Carlo and experimental analysis of light emission phenomena in AlGaAs/GaAs HBTs
A. Di Carlo P. Lugli C. Canali R. Malik M. Manfredi A. Neviani E. Zanoni G. Zandler
Semiconductor Science and Technology, 13, pp. 858 - 63 (1998/08)
aluminium compounds;conduction bands;electroluminescence;gallium arsenide;heterojunction bipolar transistors;hot carriers;impact ionisation;Monte Carlo methods;semiconductor heterojunctions;valence bands;