Publications

Spontaneous and piezoelectric polarization effects on the output characteristics of AlGaN/GaN heterojunction modulation doped FETs
F. Sacconi A. Di Carlo P. Lugli H. Morkoc
IEEE Transactions on Electron Devices, 48, pp. 450 - 7 (2001/03)
aluminium compounds;carrier density;dielectric polarisation;gallium compounds;III-V semiconductors;microwave field effect transistors;microwave power transistors;piezoelectric semiconductors;Poisson equation;power HEMT;Schrodinger equation;semiconductor device models;wide band gap semiconductors;

Theory of photon Bloch oscillations in photonic crystals
G. Malpuech A. Kavokin G. Panzarini A. Di Carlo
Physical Review B (Condensed Matter), 63, pp. 035108 - 1 (2001/01/15)
elemental semiconductors;III-V semiconductors;mirrors;oscillations;photonic band gap;porous semiconductors;silicon;

Tuning optical properties of GaN-based nanostructures by charge screening
A. Di Carlo
Physica Status Solidi A, 183, pp. 81 - 5 (2001/01/16)
gallium compounds;III-V semiconductors;nanostructured materials;optical properties;oscillator strengths;semiconductor doping;wide band gap semiconductors;

Tuning the optical properties of thiophene oligomers toward infrared emission: A theoretical study
G. Daminelli J. Widany A. Di Carlo P. Lugli
Journal of Chemical Physics, 115, pp. 4919 - 23 (2001/09/08)
density functional theory;HF calculations;INDO calculations;infrared spectra;organic compounds;red shift;spectral line shift;tight-binding calculations;

Density-functional based tight-binding calculations on thiophene polymorphism
J. Widany G. Daminelli A. Di Carlo P. Lugli
7th International Workshop on Computational Electronics. Book of Abstracts. IWCE (Cat. No.00EX427), , pp. 138 - 9 (2000)
density functional theory;electronic structure;organic compounds;polymorphism;tight-binding calculations;

Doping screening of polarization fields in nitride heterostructures
A. Di Carlo F. Della Sala P. Lugli V. Fiorentini F. Bernardini
Applied Physics Letters, 76, pp. 3950 - 2 (2000/06/26)
electron-hole recombination;light polarisation;photoluminescence;radiative lifetimes;semiconductor doping;semiconductor quantum wells;spectral line shift;tight-binding calculations;wide band gap semiconductors;

Effects of the spontaneous polarization and piezoelectric fields on the luminescence spectra of GaN/Al_0.15Ga_0.85N quantum wells
G. Traetta A. Passaseo M. Longo D. Cannoletta R. Cingolani M. Lomascolo A. Bonfiglio A. Di Carlo F. Della Sala P. Lugli A. Botchkarev H. Morkoc
Physica E: Low-Dimensional Systems and Nanostructures, 7, pp. 929 - 933 (2000)
Semiconducting gallium compounds;Semiconducting aluminum compounds;Polarization;Piezoelectricity;Electron transitions;Nitrides;Luminescence of inorganic solids;

Excited state electronic interactions in oligothiophenes with novel supramolecular structure
R. Tubino A. Borghesi A. Sassella C. Botta W. Porzio F. Della Sala A. Di Carlo P. Lugli
Materials Research Society Symposium - Proceedings, 598, pp. 3 - 48 (2000)
Molecular structure;Electron energy levels;Molecular beams;Deposition;Thin films;Epitaxial growth;X ray diffraction analysis;Light transmission;Optical properties;Anisotropy;

Excited state electronic interactions in oligothiophenes with novel supramolecular structure
R. Tubino A. Borghesi A. Sassella C. Botta W. Porzio F.D. Sala A. Di Carlo P. Lugli
Electrical, Optical, and Magnetic Properties of Organic Solid-State Materials V. Symposium (Materials Research Society Proceedings Vol.598), , pp. 3 - 48 (2000)
excited states;molecular beam epitaxial growth;molecular electronic states;organic semiconductors;photoemission;semiconductor epitaxial layers;visible spectra;X-ray diffraction;

Exciton dynamics and valence band mixing in tensile-strained semiconductor quantum wells
E. Perez L. Vina E.S. Koteles K.M. Lau A. Di Carlo P. Lugli
Semiconductor Science and Technology, 15, pp. 189 - 96 (2000/02)
band structure;excitons;gallium arsenide;gallium compounds;III-V semiconductors;interface states;semiconductor quantum wells;valence bands;

Factors limiting the maximum operating voltage of microwave devices
E. Zanoni G. Meneghesso A. Di Carlo P. Lugli L. Rossi
International Journal of High Speed Electronics and Systems, 10, pp. 119 - 28 (2000/03)
ageing;electroluminescence;gallium arsenide;high electron mobility transistors;hot carriers;III-V semiconductors;impact ionisation;indium compounds;microwave field effect transistors;Monte Carlo methods;semiconductor device breakdown;semiconductor device measurement;semiconductor device models;semiconductor device reliability;

Influence of internal electric fields on the ground level emission of GaN/AlGaN multi-quantum wells
A. Bonfiglio M. Lomascolo G. Traetta R. Cingolani A. Di Carlo F. Della Sala P. Lugli A. Botchkarev H. Morkoc
MRS Internet Journal of Nitride Semiconductor Research, 5, pp. 6 - (2000)
Gallium;Electric fields;Molecular beam epitaxy;Cryostats;X ray diffraction;Electronic structure;Fermi level;Electrons;Heterojunctions;Mathematical models;Optimization;

Influence of internal electric fields on the ground level emission of GaN/AlGaN multi-quantum wells
A. Bonfiglio M. Lomascolo G. Traetta R. Cingolani A. Di Carlo F. Della Sala P. Lugli A. Botchkarev H. Morkoc
Materials Research Society Symposium - Proceedings, 595, pp. 12 - 6 (2000)
Semiconducting gallium compounds;Semiconducting aluminum compounds;Electric fields;Emission spectroscopy;Mathematical models;Interfaces (materials);Molecular beam epitaxy;Substrates;Chemical cleaning;Semiconductor device structures;

Influence of internal electric fields on the ground level emission of GaN/AlGaN multi-quantum wells
A. Bonfiglio M. Lomascolo G. Traetta R. Cingolani A. Di Carlo F. Della Sala P. Lugli A. Botchkarev H. Morkoc
GaN and Related Alloys - 1999. Symposium (Materials Research Society Symposium Proceedings Vol.595), , pp. 12 - 6 (2000)
aluminium compounds;crystal field interactions;electric fields;gallium compounds;III-V semiconductors;internal stresses;photoluminescence;SCF calculations;semiconductor quantum wells;semiconductor superlattices;shielding;tight-binding calculations;wide band gap semiconductors;

Many-body effects on excitons properties in GaN/AlGaN quantum wells
G. Traetta R. Cingolani A. Di Carlo F. Della Sala P. Lugli
Applied Physics Letters, 76, pp. 1042 - 4 (2000/02/21)
absorption coefficients;aluminium compounds;dielectric polarisation;excitons;gallium compounds;Green's function methods;III-V semiconductors;optical saturable absorption;oscillator strengths;piezoelectric semiconductors;semiconductor quantum wells;tight-binding calculations;wave functions;wide band gap semiconductors;

Mesoscopic capacitor effect in GaN/AlGaN quantum wells
M. Lomascolo G. Traetta A. Passaseo A. Pomarico R. Cingolani A. Di Carlo P. Lugli A. Bonfiglio Berti E. Napolitani S.K. Sinha A.V. Drigo
Proceedings of International Workshop on Nitride Semiconductors, , pp. 614 - 17 (2000)
aluminium compounds;capacitance;dielectric polarisation;electron-hole recombination;gallium compounds;III-V semiconductors;interface states;mesoscopic systems;nonradiative transitions;piezoelectric semiconductors;semiconductor quantum wells;wide band gap semiconductors;

Microscopic modeling of GaN-based heterostructures
F. Sacconi F. Della Sala A. Di Carlo P. Lugli
7th International Workshop on Computational Electronics. Book of Abstracts. IWCE (Cat. No.00EX427), , pp. 136 - 7 (2000)
gallium compounds;III-V semiconductors;semiconductor heterojunctions;semiconductor quantum wells;wide band gap semiconductors;

Modeling of GaN-based heterostructure devices
F. Sacconi A. Di Carlo F. Della Sala P. Lugli
GAAS 2000. Conference Proceedings, , pp. 4 (2000)
aluminium compounds;gallium compounds;III-V semiconductors;microwave field effect transistors;microwave power transistors;Poisson equation;power HEMT;Schrodinger equation;semiconductor device models;wide band gap semiconductors;

Monte Carlo study of the dynamic breakdown effects in HEMT's
A. Di Carlo L. Rossi P. Lugli G. Zandler G. Meneghesso M. Jackson E. Zanoni
IEEE Electron Device Letters, 21, pp. 149 - 51 (2000/04)
high electron mobility transistors;impact ionisation;Monte Carlo methods;semiconductor device breakdown;semiconductor device models;

Photonic Bloch oscillations in laterally confined Bragg mirrors
A. Kavokin G. Malpuech A. Di Carlo P. Lugli F. Rossi
Physical Review B (Condensed Matter), 61, pp. 4413 - 16 (2000/02/15)
Bragg gratings;digital simulation;elemental semiconductors;high-speed optical techniques;mirrors;photonic band gap;porous semiconductors;semiconductor superlattices;silicon;