Publications

Ultralow threshold polariton lasing by electron cooling in doped microcavities
G. Malpuech J.J. Baumberg A. Kavokin A. Di Carlo
Technical Digest. Summaries of papers presented at the Quantum Electronics and Laser Science Conference. Conference Edition (IEEE Cat. No.02CH37338), vol.1, pp. 58 (2002)
dispersion relations;electron gas;laser theory;microcavities;microcavity lasers;polaritons;semiconductor lasers;spontaneous emission;

Breakdown quenching in high electron mobility transistor by using body contact
A. Sleiman A. Di Carlo P. Lugli G. Zandler
IEEE Transactions on Electron Devices, 48, pp. 2188 - 91 (2001/10)
high electron mobility transistors;impact ionisation;Monte Carlo methods;semiconductor device breakdown;semiconductor device models;semiconductor device reliability;

Charge screening of polarization fields in nitride nanostructures
A. Di Carlo A. Reale
Physica Status Solidi B, 228, pp. 553 - 8 (2001/11/01)
carrier density;dielectric polarisation;electron-hole recombination;III-V semiconductors;nanostructured materials;oscillator strengths;piezoelectric semiconductors;wide band gap semiconductors;

Charge storage and screening of the internal field in GaN/AlGaN quantum wells
G. Traetta A. Di Carlo A. Reale P. Lugli M. Lomascolo A. Passaseo R. Cingolani A. Bonfiglio M. Berti E. Napolitani M. Natali S.K. Sinha A.V. Drigo
Journal of Crystal Growth, 230, pp. 492 - 6 (2001/09)
aluminium compounds;dielectric polarisation;gallium compounds;III-V semiconductors;interface states;photoluminescence;piezoelectric semiconductors;semiconductor quantum wells;wide band gap semiconductors;

Density-functional based tight-binding calculations on thiophene polymorphism
J. Widany G. Daminelli A. Di Carlo P. Lugli
VLSI Design, 13, pp. 393 - 7 (2001)
crystal structure;density functional theory;organic compounds;polymorphism;tight-binding calculations;total energy;

Efficient self-consistent pseudopotential calculation of nanostructured devices
F. Chirico A. Di Carlo P. Lugli
Physical Review B (Condensed Matter and Materials Physics), 64, pp. 045314 - 1 (2001/07/15)
nanostructured materials;Poisson equation;pseudopotential methods;SCF calculations;Schrodinger equation;semiconductor heterojunctions;wave functions;

Electronic band structure and intermolecular interaction in substituted thiophene polymorphs
J. Widany G. Daminelli A. Di Carlo P. Lugli G. Jungnickel M. Elstner Th. Frauenheim
Physical Review B (Condensed Matter and Materials Physics), 63, pp. 233204 - 1 (2001/06/15)
band structure;Brillouin zones;density functional theory;organic compounds;polymorphism;tight-binding calculations;total energy;wave functions;

Experimental and Monte Carlo analysis of near-breakdown phenomena in GaAs-based heterostructure FETs
A. Sleiman A. Di Carlo L. Tocca P. Lugli G. Zandler G. Meneghesso E. Zanoni C. Canali A. Cetronio M. Lanzieri M. Peroni
Semiconductor Science and Technology, 16, pp. 315 - 19 (2001/05)
aluminium compounds;electroluminescence;field effect transistors;gallium arsenide;high electron mobility transistors;III-V semiconductors;impact ionisation;indium compounds;Monte Carlo methods;

Gain dynamics in traveling-wave semiconductor optical amplifiers
A. Reale A. Di Carlo P. Lugli
IEEE Journal of Selected Topics in Quantum Electronics, 7, pp. 293 - 9 (2001/03)
carrier mobility;laser theory;optical pumping;quantum well lasers;semiconductor device models;semiconductor optical amplifiers;

Mesoscopic-capacitor effect in GaN/Al_xGa_1-xN quantum wells: Effects on the electronic states
A. Di Carlo A. Reale P. Lugli G. Traetta M. Lomascolo A. Passaseo R. Cingolani A. Bonfiglio M. Berti E. Napolitani M. Natali S.K. Sinha A.V. Drigo A. Vinattieri M. Colocci
Physical Review B (Condensed Matter and Materials Physics), 63, pp. 235305 - 1 (2001/06/15)
aluminium compounds;electron-hole recombination;gallium compounds;ground states;III-V semiconductors;interface states;semiconductor quantum wells;wide band gap semiconductors;

Microscopic modeling of GaN-based heterostructures
F. Sacconi F. Della Sala A. Di Carlo P. Lugli
VLSI Design, 13, pp. 387 - 91 (2001)
effective mass;gallium compounds;high electron mobility transistors;III-V semiconductors;semiconductor device models;tight-binding calculations;wide band gap semiconductors;

Optical and electronic properties of GaN based heterostructures: a self-consistent time-dependent approach
A. Reale A. Di Carlo P. Lugli A. Kavokin
Physica Status Solidi A, 183, pp. 121 - 4 (2001/01/16)
aluminium compounds;electron-hole recombination;gallium compounds;III-V semiconductors;photoluminescence;SCF calculations;semiconductor quantum wells;time resolved spectra;wide band gap semiconductors;

Photoluminescence efficiency of substituted quaterthiophene crystals
G. Gigli F. Della Sala M. Lomascolo M. Anni G. Barbarella A. Di Carlo P. Lugli R. Cingolani
Physical Review Letters, 86, pp. 167 - 70 (2001/01/01)
molecular configurations;nonradiative transitions;organic compounds;photoluminescence;

Propagation and scattering of exciton-polaritons in nitride-based multiple quantum wells
Guillaume Malpuech Marian Zamfirescu Alexey Kavokin Aldo Di Carlo
Materials Research Society Symposium - Proceedings, 639, pp. 9 - 9 (2001)
Light propagation;Light scattering;Semiconductor quantum wells;Nitrides;

Propagation and scattering of exciton-polaritons in nitride-based multiple quantum wells
G. Malpuech M. Zamfirescu A. Kavokin A. Di Carlo
GaN and Related Alloys - 2000. Symposium (Materials Research Society Symposium Proceedings Vol.639), , pp. 9 - 9 (2001)
aluminium compounds;excitons;gallium compounds;III-V semiconductors;light coherence;light scattering;polaritons;semiconductor quantum wells;time resolved spectra;wide band gap semiconductors;

Quasi two-dimensional modeling of GaN-based MODFETs
F. Sacconi A. Di Carlo P. Lugli H. Morkoc
Physica Status Solidi A, 188, pp. 251 - 4 (2001/11/16)
aluminium compounds;effective mass;field effect transistors;gallium compounds;III-V semiconductors;Poisson equation;Schrodinger equation;semiconductor device models;wide band gap semiconductors;

Recombination dynamics in GaN/AlGaN quantum wells: the role of built-in fields
D. Alderighi A. Vinattieri J. Kudrna M. Colocci A. Reale G. Kokolakis A. Di Carlo P. Lugli F. Semond N. Grandjean J. Massies
Physica Status Solidi A, 188, pp. 851 - 5 (2001/11/23)
aluminium compounds;electron-hole recombination;gallium compounds;III-V semiconductors;photoluminescence;Poisson equation;Schrodinger equation;semiconductor quantum wells;time resolved spectra;wide band gap semiconductors;

Scanning tunneling current-voltage spectroscopy on poly(p-phenylene vinylene) films: A nanoscale probe for the electronic conduction
R. Rinaldi R. Cingolani K.M. Jones A.A. Baski H. Morkoc A. Di Carlo J. Widany F.D. Sala P. Lugli
Physical Review B (Condensed Matter), 63, pp. 075311 - 1 (2001/02/15)
Fermi level;organic semiconductors;polymer films;scanning tunnelling spectroscopy;

Self-consistent full-band modeling of quantum semiconductor nanostructures
F. Chirico A. Di Carlo P. Lugli
VLSI Design, 13, pp. 91 - 5 (2001)
elemental semiconductors;high electron mobility transistors;integration;interface states;iterative methods;MIS structures;Poisson equation;pseudopotential methods;SCF calculations;Schrodinger equation;silicon;silicon compounds;wave functions;

Simulation of optoelectronic devices
P. Lugli F. Compagnone A. Di Carlo A. Reale
VLSI Design, 13, pp. 23 - 36 (2001)
laser theory;Monte Carlo methods;optoelectronic devices;quantum well lasers;semiconductor device models;semiconductor optical amplifiers;simulation;