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Found 438 publications.

Page 16 of 22



Experimental investigation and simulation of hybrid organic/inorganic Schottky diodes
A. Bolognesi A. Di Carlo P. Lugli T. Kampen D.R.T. Zahn
Journal of Physics: Condensed Matter, 15, pp. 2719 - 28 (2003/10/01)
gallium arsenide;III-V semiconductors;organic semiconductors;Schottky barriers;Schottky diodes;semiconductor device models;semiconductor-metal boundaries;silver;space charge;

Improvement of the extended one-pot (EOP) procedure to form poly(aryleneethynylene)s and investigation of their electrical and optical properties
R. Pizzoferrato M. Berliocchi A. Di Carlo P. Lugli M. Venanzi A. Micozzi A. Ricci C. Lo Sterzo
Macromolecules, 36, pp. 2215 - 2223 (2003)
Electric properties;Optical properties;Solvents;Temperature;Polymerization;Catalysis;Electron transport properties;Conductive materials;Electronic properties;Computer simulation;

Influence of the electron-phonon interactions on the transport properties at the molecular scale
A. Pecchia M. Gheorghe A. Di Carlo T.A. Niehaus R. Scholz T. Frauenheim P. Lugli
Proceedings of the SPIE - The International Society for Optical Engineering, 5219, pp. 109 - 16 (2003/10/17)
electron-phonon interactions;fluctuations;molecular dynamics method;molecular electronics;tunnelling;

Interplay between barrier contact, mobility models, and traps in the electrical characteristics of OTFT
A. Di Carlo A. Bolognesi M. Berliocchi P. Lugli
Proceedings of the SPIE - The International Society for Optical Engineering, 5217, pp. 87 - 94 (2003)
carrier mobility;contact resistance;organic semiconductors;semiconductor thin films;thin film transistors;

Large drift-diffusion and Monte Carlo modeling of organic semiconductor devices
A. Bolognesi A. Di Carlo P. Lugli G. Conte
Synthetic Metals, 138, pp. 95 - 100 (2003/06/02)
carrier mobility;Monte Carlo methods;organic semiconductors;Schottky diodes;semiconductor device models;thin film transistors;

Microscopic theory of nanostructured semiconductor devices: beyond the envelope-function approximation
A. Di Carlo
Semiconductor Science and Technology, 18, pp. 1 - 31 (2003/01)
density functional theory;nanoelectronics;organic semiconductors;pseudopotential methods;quantum well devices;reviews;semiconductor device models;semiconductor quantum wells;tight-binding calculations;

Modulation of the electronic transport properties of carbon nanotubes with adsorbed molecules
A. Pecchia A. Gheorghe A. Di Carlo P. Lugli
Synthetic Metals, 138, pp. 89 - 93 (2003/06/02)
adsorbed layers;ballistic transport;carbon nanotubes;density functional theory;electrical conductivity;tight-binding calculations;

Monte Carlo simulation of tunable mid-infrared emission from coupled Wannier-Stark ladders in semiconductor superlattices
M. Manenti F. Compagnone A. Di Carlo P. Lugli G. Scamarcio F. Rizzi
Applied Physics Letters, 82, pp. 4029 - 31 (2003/06/09)
aluminium compounds;electroluminescence;gallium arsenide;III-V semiconductors;Monte Carlo methods;semiconductor superlattices;Stark effect;Wannier functions;

Role of thermal vibrations in molecular wire conduction
A. Pecchia M. Gheorghe A. Di Carlo P. Lugli T.A. Niehaus T. Frauenheim R. Scholz
Physical Review B (Condensed Matter and Materials Physics), 68, pp. 235321 - 1 (2003/12/15)
current fluctuations;electron-phonon interactions;metal-semiconductor-metal structures;molecular dynamics method;molecular electronics;organic semiconductors;phonon-phonon interactions;semiconductor quantum wires;tunnelling;

Schottky barrier height at an organic/metal junction: a first-principles study of PTCDA/X (X=Al, Ag) contacts
S. Picozzi A. Pecchia M. Gheorghe A. Di Carlo P. Lugli B. Delley M. Elstner
Physical Review B (Condensed Matter and Materials Physics), 68, pp. 195309 - 1 (2003/11/15)
ab initio calculations;aluminium;density functional theory;electronic density of states;Fermi level;organic semiconductors;rectification;Schottky barriers;semiconductor-metal boundaries;silver;surface energy;

Simulation of molecular electronics circuits
L. Latessa A. Pecchia A. Di Carlo P. Lugli
Proceedings of the 16th European Conference on Circuit Theory and Design, ECCTD'03, vol.3, pp. 41 - 4 (2003)
Green's function methods;molecular electronic states;simulation;tight-binding calculations;

Tailorable acceptor C60-nBn and donor C60-mNm pairs for molecular electronics
Rui-Hua Xie G.W. Bryant Jijun Zhao Jr. Smith A. Di Carlo A. Pecchia
Physical Review Letters, 90, pp. 206602 - 1 (2003/05/23)
fullerene compounds;molecular electronics;p-n junctions;rectifiers;transistors;

Tetra-phenyl porphyrin based thin film transistors
P. Checcoli, G. Conte, S. Salvatori, R. Paolesse, A. Bolognesi, M. Berliocchi, F. Brunetti, A. Di Carlo
Synthetic Metals, 138, pp. 261 - 6 (2003/06/02)
leakage currents;molecular electronics;organic semiconductors;spray coatings;thin film transistors;



Atomistic simulations of complex materials: ground-state and excited-state properties
T. Frauenheim G. Seifert M. Elstner T. Niehaus C. Kohler M. Amkreutz M. Sternberg Z. Hajnal A. Di Carlo S. Suhai
Journal of Physics: Condensed Matter, 14, pp. 3015 - 47 (2002/03/25)
density functional theory;electronic structure;excited states;ground states;tight-binding calculations;

Breakdown dynamics and RF-breakdown in InP-based HEMTs
A. Sleiman A. Di Carlo P. Lugli
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307), , pp. 181 - 4 (2002)
high electron mobility transistors;III-V semiconductors;impact ionisation;indium compounds;microwave field effect transistors;microwave power transistors;millimetre wave field effect transistors;millimetre wave power transistors;Monte Carlo methods;power HEMT;semiconductor device breakdown;semiconductor device models;

Coupled free-carrier and exciton dynamics in bulk wurtzite GaN
F. Compagnone G. Kokolakis A. Di Carlo P. Lugli
Physica Status Solidi C, , pp. 901 - 5 (2002)
acoustoelectric effects;Boltzmann equation;electron density;electron-phonon interactions;excitons;gallium compounds;high-speed optical techniques;hole density;III-V semiconductors;Monte Carlo methods;phonon-exciton interactions;piezoelectricity;wide band gap semiconductors;

Coupled free-carrier and exciton dynamics in bulk wurtzite GaN
F. Compagnone G. Kokolakis A. Di Carlo P. Lugli
Physica Status Solidi B, 234, pp. 901 - 5 (2002/12)
Boltzmann equation;carrier relaxation time;electron density;electron-hole drops;gallium compounds;hole density;III-V semiconductors;Monte Carlo methods;phonon-exciton interactions;piezoelectric semiconductors;wide band gap semiconductors;

Dynamic screening in AlGaN/GaN multi quantum wells
A. Reale G. Massari A. Di Carlo P. Lugli
Physica Status Solidi A, 190, pp. 81 - 6 (2002/03)
accumulation layers;aluminium compounds;electron-hole recombination;gallium compounds;III-V semiconductors;nonradiative transitions;photoluminescence;Poisson equation;Schrodinger equation;semiconductor quantum wells;time resolved spectra;wide band gap semiconductors;

Electron acceleration by light in semiconductor microcavities
A. Kavokin M. Zamfirescu G. Malpuech A. Di Carlo
Physica Status Solidi A, 190, pp. 175 - 9 (2002/03)
excitons;optical pumping;polaritons;S-matrix theory;semiconductor quantum wells;stimulated scattering;time resolved spectra;

Electron-optical-phonon interaction in the In1-xGaxAs/In1-yAlyAs superlattice
F. Compagnone A. Di Carlo P. Lugli
Physical Review B (Condensed Matter and Materials Physics), 65, pp. 125314 - 1 (2002/03/15)
aluminium compounds;eigenvalues and eigenfunctions;electron-phonon interactions;gallium arsenide;III-V semiconductors;indium compounds;interface phonons;Kronig-Penney model;phonon dispersion relations;semiconductor superlattices;

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