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Quantum capacitance effects in carbon nanotube field-effect devicesL. Latessa A. Pecchia A. Di Carlo P. Lugli

2004 10th International Workshop on Computational Electronics (IEEE Cat. No.04EX915), , pp. 73 - 4 (2004)ab initio calculations;capacitance;carbon nanotubes;field effect transistors;Green's function methods;MOSFET circuits;quantum theory;

Recombination dynamics in InGaN/GaN quantum wells: role of the piezoelectric field versus carrier localizationA. Vinattieri M. Colocci F. Rossi C. Ferrari N. Armani G. Salviati A. Reale A. Di Carlo P. Lugli V. Grillo

Physica Status Solidi C, , pp. 1397 - 402 (2004)carrier density;cathodoluminescence;gallium compounds;III-V semiconductors;indium compounds;photoluminescence;piezoelectricity;semiconductor quantum wells;time resolved spectra;wide band gap semiconductors;

Simulation of carbon nanotube field-effect devicesLuca Latessa Alessandro Pecchia Aldo Di Carlo Giuseppe Scarpa Paolo Lugli

2004 4th IEEE Conference on Nanotechnology, , pp. 10 - 12 (2004)Carbon nanotubes;Green's function;Electrostatics;MOSFET devices;Quantum theory;Capacitance;Band structure;Hamiltonians;Matrix algebra;Computer simulation;

Simulation of carbon nanotube field-effect devicesL. Latessa A. Pecchia A. Di Carlo G. Scarpa P. Lugli

2004 4th IEEE Conference on Nanotechnology (IEEE Cat. No.04TH8757), , pp. 10 - 12 (2004)ab initio calculations;carbon nanotubes;density functional theory;Green's function methods;MOSFET;nanotube devices;Poisson equation;semiconductor device models;semiconductor materials;tight-binding calculations;

Single wall carbon nanotube based aggregates and their electrical characterizationM. Berliocchi S. Orlanducci A. Reale P. Regoliosi A. Di Carlo P. Lugli M.L. Terranova F. Brunetti G. Bruni M. Cirillo

Synthetic Metals, 145, pp. 171 - 6 (2004/09/21)aggregates (materials);carbon nanotubes;electrophoresis;membranes;self-assembly;

The influence of thermal fluctuations on the electronic transport of alkeno-thiolatesA. Pecchia M. Gheorghe L. Latessa A. Di Carlo P. Lugli

IEEE Transactions on Nanotechnology, 3, pp. 353 - 7 (2004/09)bonds (chemical);density functional theory;Fermi level;gold;molecular electronics;monolayers;organic compounds;phonons;self-assembly;tight-binding calculations;tunnelling;

The simulation of molecular and organic devices: A critical review and a look at future developmentP. Lugli G. Csaba C. Erlen S. Harret G. Scarpa A. Di Carlo A. Pecchia L. Latessa A. Bolognesi

2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts, , pp. 100 - 101 (2004)Field effect transistors;Grain boundaries;Probability density function;Green's function;Electric fields;Electron tunneling;Boundary conditions;Electric currents;Phonons;Computer simulation;

The simulation of molecular and organic devices: a critical review and a look at future developmentP. Lugli G. Csaba C. Erlen S. Harrer G. Scarpa A. Di Carlo A. Pecchia L. Latessa A. Bolognesi

2004 10th International Workshop on Computational Electronics (IEEE Cat. No.04EX915), , pp. 100 - 1 (2004)circuit simulation;molecular electronics;organic semiconductors;

Tuning the piezoelectric fields in quantum dots: microscopic description of dots grown on (N11) surfacesM. Povolotskyi A. Di Carlo P. Lugli S. Birner P. Vogl

IEEE Transactions on Nanotechnology, 3, pp. 124 - 8 (2004/03)conduction bands;effective mass;elastic deformation;III-V semiconductors;indium compounds;piezoelectric semiconductors;piezoelectricity;semiconductor quantum dots;valence bands;

Atomistic tight-binding calculations for the investigation of transport in extremely scaled SOI transistorsM. Stadele A. Di Carlo P. Lugli F. Sacconi B. Tuttle

Technical Digest - International Electron Devices Meeting, , pp. 229 - 232 (2003)Silicon on insulator technology;Carrier mobility;Gates (transistor);Semiconducting silicon;Quantum theory;Semiconducting germanium;Heterojunctions;Electron tunneling;Ultrathin films;Energy gap;Electric currents;Wave equations;Poisson equation;Boundary conditions;

Atomistic tight-binding calculations for the investigation of transport in extremely scaled SOI transistorsM. Stadele A. Di Carlo P. Lugli F. Sacconi B. Tuttle

IEEE International Electron Devices Meeting 2003, , pp. 9 - 2 (2003)MOSFET;semiconductor device models;silicon-on-insulator;tight-binding calculations;tunnelling;

Channel temperature measurement of PHEMT by means of optical probesD. Savian A. Di Carlo R. Lugli M. Peroni C. Cetronio C. Lanzieri G. Meneghesso E. Zanoni

Electronics Letters, 39, pp. 247 - 8 (2003/01/23)photoconductivity;power HEMT;probes;semiconductor device measurement;temperature measurement;thermal resistance;

Channel thickness dependence of breakdown dynamic in InP-based lattice-matched HEMTsA. Sleiman A. Di Carlo P. Lugli G. Meneghesso E. Zanoni J.L. Thobel

IEEE Transactions on Electron Devices, 50, pp. 2009 - 14 (2003/10)high electron mobility transistors;III-V semiconductors;impact ionisation;indium compounds;Monte Carlo methods;semiconductor device breakdown;

Charge injection and transport in tetra-phenyl-porphyrinC. Calcavento, G. Conte, S. Salvatori, R. Paolesse, M. Berliocchi, A. Di Carlo, P. Lugli, A. Sassella

Synthetic Metals, 138, pp. 255 - 60 (2003/06/02)charge injection;dark conductivity;interface states;organic semiconductors;semiconductor thin films;semiconductor-metal boundaries;spray coatings;tunnelling;work function;

Comprehensive description of the dynamical screening of the internal electric fields of AlGaN/GaN quantum wells in time-resolved photoluminescence experimentsA. Reale G. Massari A. Di Carlo P. Lugli A. Vinattieri D. Alderighi M. Colocci F. Semond N. Grandjean J. Massies

Journal of Applied Physics, 93, and Virtual Journal of Ultrafast Science, Vol. 2, n.1, January 2003., pp. 400 - 9 (2003/01/01)aluminium compounds;dielectric polarisation;electron-hole recombination;gallium compounds;III-V semiconductors;nonradiative transitions;photoluminescence;Poisson equation;radiative lifetimes;SCF calculations;Schrodinger equation;semiconductor quantum wells;time resolved spectra;wide band gap semiconductors;

Density functional tight-binding for self-consistent computation of the transport properties of molecular electronic devicesA. Pecchia L. Latessa A. Di Carlo P. Lugli

Proceedings of the SPIE - The International Society for Optical Engineering, 5219, pp. 25 - 32 (2003/10/17)ab initio calculations;density functional theory;Green's function methods;molecular electronics;Poisson equation;SCF calculations;tight-binding calculations;

Electrical characterization of single-wall carbon nanotubesM. Berliocchi F. Brunetti A. Di Carlo P. Lugli S. Orlanducci M.L. Terranova

Proceedings of the SPIE - The International Society for Optical Engineering, 5118, pp. 633 - 8 (2003)carbon nanotubes;electrical conductivity;nanotube devices;

Electronic transport properties of molecular devicesA. Pecchia L. Latessa A. Di Carlo P. Lugli T. Neihaus

Physica E, 19, pp. 139 - 44 (2003/07)ab initio calculations;density functional theory;Green's function methods;molecular electronics;organic compounds;Poisson equation;tight-binding calculations;

Enhancement of the effective tunnel mass in ultrathin silicon dioxide layersM. Stadele F. Sacconi A. Di Carlo P. Lugli

Journal of Applied Physics, 93, pp. 2681 - 90 (2003/03/01)effective mass;insulating thin films;silicon compounds;tight-binding calculations;tunnelling;

Exciton relaxation in bulk wurtzite GaN: the role of piezoelectric interactionG. Kokolakis F. Compagnone A. Di Carlo P. Lugli

Physica Status Solidi A, 195, pp. 618 - 27 (2003/02)crystal structure;dissociation;excitons;gallium compounds;III-V semiconductors;Monte Carlo methods;phonons;wide band gap semiconductors;