Publications

Quantum capacitance effects in carbon nanotube field-effect devices
L. Latessa A. Pecchia A. Di Carlo P. Lugli
2004 10th International Workshop on Computational Electronics (IEEE Cat. No.04EX915), , pp. 73 - 4 (2004)
ab initio calculations;capacitance;carbon nanotubes;field effect transistors;Green's function methods;MOSFET circuits;quantum theory;

Recombination dynamics in InGaN/GaN quantum wells: role of the piezoelectric field versus carrier localization
A. Vinattieri M. Colocci F. Rossi C. Ferrari N. Armani G. Salviati A. Reale A. Di Carlo P. Lugli V. Grillo
Physica Status Solidi C, , pp. 1397 - 402 (2004)
carrier density;cathodoluminescence;gallium compounds;III-V semiconductors;indium compounds;photoluminescence;piezoelectricity;semiconductor quantum wells;time resolved spectra;wide band gap semiconductors;

Simulation of carbon nanotube field-effect devices
Luca Latessa Alessandro Pecchia Aldo Di Carlo Giuseppe Scarpa Paolo Lugli
2004 4th IEEE Conference on Nanotechnology, , pp. 10 - 12 (2004)
Carbon nanotubes;Green's function;Electrostatics;MOSFET devices;Quantum theory;Capacitance;Band structure;Hamiltonians;Matrix algebra;Computer simulation;

Simulation of carbon nanotube field-effect devices
L. Latessa A. Pecchia A. Di Carlo G. Scarpa P. Lugli
2004 4th IEEE Conference on Nanotechnology (IEEE Cat. No.04TH8757), , pp. 10 - 12 (2004)
ab initio calculations;carbon nanotubes;density functional theory;Green's function methods;MOSFET;nanotube devices;Poisson equation;semiconductor device models;semiconductor materials;tight-binding calculations;

Single wall carbon nanotube based aggregates and their electrical characterization
M. Berliocchi S. Orlanducci A. Reale P. Regoliosi A. Di Carlo P. Lugli M.L. Terranova F. Brunetti G. Bruni M. Cirillo
Synthetic Metals, 145, pp. 171 - 6 (2004/09/21)
aggregates (materials);carbon nanotubes;electrophoresis;membranes;self-assembly;

The influence of thermal fluctuations on the electronic transport of alkeno-thiolates
A. Pecchia M. Gheorghe L. Latessa A. Di Carlo P. Lugli
IEEE Transactions on Nanotechnology, 3, pp. 353 - 7 (2004/09)
bonds (chemical);density functional theory;Fermi level;gold;molecular electronics;monolayers;organic compounds;phonons;self-assembly;tight-binding calculations;tunnelling;

The simulation of molecular and organic devices: A critical review and a look at future development
P. Lugli G. Csaba C. Erlen S. Harret G. Scarpa A. Di Carlo A. Pecchia L. Latessa A. Bolognesi
2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts, , pp. 100 - 101 (2004)
Field effect transistors;Grain boundaries;Probability density function;Green's function;Electric fields;Electron tunneling;Boundary conditions;Electric currents;Phonons;Computer simulation;

The simulation of molecular and organic devices: a critical review and a look at future development
P. Lugli G. Csaba C. Erlen S. Harrer G. Scarpa A. Di Carlo A. Pecchia L. Latessa A. Bolognesi
2004 10th International Workshop on Computational Electronics (IEEE Cat. No.04EX915), , pp. 100 - 1 (2004)
circuit simulation;molecular electronics;organic semiconductors;

Tuning the piezoelectric fields in quantum dots: microscopic description of dots grown on (N11) surfaces
M. Povolotskyi A. Di Carlo P. Lugli S. Birner P. Vogl
IEEE Transactions on Nanotechnology, 3, pp. 124 - 8 (2004/03)
conduction bands;effective mass;elastic deformation;III-V semiconductors;indium compounds;piezoelectric semiconductors;piezoelectricity;semiconductor quantum dots;valence bands;

Atomistic tight-binding calculations for the investigation of transport in extremely scaled SOI transistors
M. Stadele A. Di Carlo P. Lugli F. Sacconi B. Tuttle
Technical Digest - International Electron Devices Meeting, , pp. 229 - 232 (2003)
Silicon on insulator technology;Carrier mobility;Gates (transistor);Semiconducting silicon;Quantum theory;Semiconducting germanium;Heterojunctions;Electron tunneling;Ultrathin films;Energy gap;Electric currents;Wave equations;Poisson equation;Boundary conditions;

Atomistic tight-binding calculations for the investigation of transport in extremely scaled SOI transistors
M. Stadele A. Di Carlo P. Lugli F. Sacconi B. Tuttle
IEEE International Electron Devices Meeting 2003, , pp. 9 - 2 (2003)
MOSFET;semiconductor device models;silicon-on-insulator;tight-binding calculations;tunnelling;

Channel temperature measurement of PHEMT by means of optical probes
D. Savian A. Di Carlo R. Lugli M. Peroni C. Cetronio C. Lanzieri G. Meneghesso E. Zanoni
Electronics Letters, 39, pp. 247 - 8 (2003/01/23)
photoconductivity;power HEMT;probes;semiconductor device measurement;temperature measurement;thermal resistance;

Channel thickness dependence of breakdown dynamic in InP-based lattice-matched HEMTs
A. Sleiman A. Di Carlo P. Lugli G. Meneghesso E. Zanoni J.L. Thobel
IEEE Transactions on Electron Devices, 50, pp. 2009 - 14 (2003/10)
high electron mobility transistors;III-V semiconductors;impact ionisation;indium compounds;Monte Carlo methods;semiconductor device breakdown;

Charge injection and transport in tetra-phenyl-porphyrin
C. Calcavento, G. Conte, S. Salvatori, R. Paolesse, M. Berliocchi, A. Di Carlo, P. Lugli, A. Sassella
Synthetic Metals, 138, pp. 255 - 60 (2003/06/02)
charge injection;dark conductivity;interface states;organic semiconductors;semiconductor thin films;semiconductor-metal boundaries;spray coatings;tunnelling;work function;

Comprehensive description of the dynamical screening of the internal electric fields of AlGaN/GaN quantum wells in time-resolved photoluminescence experiments
A. Reale G. Massari A. Di Carlo P. Lugli A. Vinattieri D. Alderighi M. Colocci F. Semond N. Grandjean J. Massies
Journal of Applied Physics, 93, and Virtual Journal of Ultrafast Science, Vol. 2, n.1, January 2003., pp. 400 - 9 (2003/01/01)
aluminium compounds;dielectric polarisation;electron-hole recombination;gallium compounds;III-V semiconductors;nonradiative transitions;photoluminescence;Poisson equation;radiative lifetimes;SCF calculations;Schrodinger equation;semiconductor quantum wells;time resolved spectra;wide band gap semiconductors;

Density functional tight-binding for self-consistent computation of the transport properties of molecular electronic devices
A. Pecchia L. Latessa A. Di Carlo P. Lugli
Proceedings of the SPIE - The International Society for Optical Engineering, 5219, pp. 25 - 32 (2003/10/17)
ab initio calculations;density functional theory;Green's function methods;molecular electronics;Poisson equation;SCF calculations;tight-binding calculations;

Electrical characterization of single-wall carbon nanotubes
M. Berliocchi F. Brunetti A. Di Carlo P. Lugli S. Orlanducci M.L. Terranova
Proceedings of the SPIE - The International Society for Optical Engineering, 5118, pp. 633 - 8 (2003)
carbon nanotubes;electrical conductivity;nanotube devices;

Electronic transport properties of molecular devices
A. Pecchia L. Latessa A. Di Carlo P. Lugli T. Neihaus
Physica E, 19, pp. 139 - 44 (2003/07)
ab initio calculations;density functional theory;Green's function methods;molecular electronics;organic compounds;Poisson equation;tight-binding calculations;

Enhancement of the effective tunnel mass in ultrathin silicon dioxide layers
M. Stadele F. Sacconi A. Di Carlo P. Lugli
Journal of Applied Physics, 93, pp. 2681 - 90 (2003/03/01)
effective mass;insulating thin films;silicon compounds;tight-binding calculations;tunnelling;

Exciton relaxation in bulk wurtzite GaN: the role of piezoelectric interaction
G. Kokolakis F. Compagnone A. Di Carlo P. Lugli
Physica Status Solidi A, 195, pp. 618 - 27 (2003/02)
crystal structure;dissociation;excitons;gallium compounds;III-V semiconductors;Monte Carlo methods;phonons;wide band gap semiconductors;