Publications

Breakdown triggering in PM-HEMTs studied by means of Monte Carlo simulator
A. Di Carlo L. Rossi P. Lugli G. Meneghesso E. Zanoni
ESSDERC'99. Proceedings of the 29th European Solid-State Device Research Conference, , pp. 548 - 51 (1999)
high electron mobility transistors;impact ionisation;Monte Carlo methods;Poisson equation;semiconductor device breakdown;semiconductor device models;

Carrier screening and polarization fields in nitride-based heterostructure devices
Fabio Della Sala Aldo Di Carlo Paolo Lugli Roberto Cingolani G. Coli M. Lomascolo A. Botchkarev H. Tang H. Morkoc
Physica B: Condensed Matter, 272, pp. 397 - 401 (1999)
Semiconductor quantum wells;Semiconducting gallium compounds;Semiconducting aluminum compounds;Charge carriers;Light scattering;Light polarization;

Effects of macroscopic polarization in III-V nitride multiple quantum wells
V. Fiorentini F. Bemardini F. Della Sala A. Di Carlo P. Lugli
Physical Review B (Condensed Matter), 60, pp. 8849 - 58 (1999/09/15)
dielectric polarisation;III-V semiconductors;interface states;nanostructured materials;SCF calculations;semiconductor quantum wells;tight-binding calculations;

Excitonic polarization grating in semiconductors induced by short light pulses
A.V. Kavokin G. Malpuech A. Carlo M. Vladimirova P. Lugli F. Rossi
Physica B, 272, pp. 509 - 12 (1999/12)
excitons;polaritons;semiconductor thin films;time resolved spectra;

Experimental and theoretical studies of near-breakdown phenomena in GaAs-based heterostructure FETs
A. Sleiman L. Rossi A. Di Carlo L. Tocca A. Bonfiglio M. Brunori P. Lugli G. Zandler G. Meneghesso E. Zanoni C. Canali A. Cetronio M. Lanzieri M. Peroni
GAAS 99. Conference Proceedings, , pp. 5 (1999)
electroluminescence;gallium arsenide;III-V semiconductors;impact ionisation;microwave field effect transistors;minority carriers;Monte Carlo methods;semiconductor device breakdown;

Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures
F. Sala A. Carlo P. Lugli F. Bernardini V. Fiorentini R. Scholz J.-M. Jancu
Applied Physics Letters, 74, pp. 2002 - 4 (1999/04/05)
carrier density;gallium compounds;III-V semiconductors;indium compounds;interface states;quantum well lasers;SCF calculations;tight-binding calculations;wide band gap semiconductors;

Micromachined pressure sensors with Al_xGa_1-xAs/GaAs- and InAs/AlSb/GaSb-resonant tunneling diodes
K. Mutamba A. Sigurdardottir A. Vogt J. Pfeiffer U. Behner A. Di Carlo H.L. Hartnagel
1999 57th Annual Device Research Conference Digest (Cat. No.99TH8393), , pp. 64 - 5 (1999)
aluminium compounds;etching;gallium arsenide;gallium compounds;III-V semiconductors;indium compounds;membranes;micromachining;microsensors;pressure sensors;resonant tunnelling diodes;

Modelling of semiconductor nanostructured devices within the tight-binding approach
P. Lugli A. Di Carlo A. Reale
Journal of Physics: Condensed Matter, 11, pp. 6035 - 43 (1999/08/09)
high electron mobility transistors;quantum well devices;SCF calculations;semiconductor device models;semiconductor optical amplifiers;tight-binding calculations;

Optical polarization grating in semiconductors induced by exciton polaritons
A.V. Kavokin G. Malpuech A. Di Carlo M. Vladimirova P. Lugli F. Rossi
Physical Review B (Condensed Matter), 60, pp. 15554 - 7 (1999/12/15)
excitons;high-speed optical techniques;light polarisation;polaritons;semiconductor heterojunctions;

Photon Bloch oscillations in laterally confined Bragg mirrors
Alexey Kavokin Guillaume Malpuech Aldo Di Carlo Paolo Lugli Fausto Rossi
Physica B: Condensed Matter, 272, pp. 491 - 494 (1999)
Photoemission;Light transmission;Photons;Porous silicon;Light scattering;Dielectric materials;

Quantum effects in nanometer MOS structures
F. Chirico F. Sala A. Carlo P. Lugli
Physica B, 272, pp. 546 - 9 (1999/12)
charge density waves;effective mass;elemental semiconductors;inversion layers;mesoscopic systems;MOSFET;Poisson equation;Schrodinger equation;silicon;

Studies of two-wave mixing of very broad-spectrum laser light in BaTiO₃
A. Pecchia M. Laurito P. Apai M.B. Danailov
Journal of the Optical Society of America B (Optical Physics), 16, pp. 917 - 23 (1999/06)
barium compounds;coupled mode analysis;light diffraction;multiwave mixing;optical phase matching;photorefractive materials;

Study of gain compression mechanisms in multiple-quantum-well In_1-xGa_xAs semiconductor optical amplifiers
A. Reale A. Di Carlo D. Campi C. Cacciatore A. Stano G. Fornuto
IEEE Journal of Quantum Electronics, 35, pp. 1697 - 703 (1999/11)
gallium arsenide;III-V semiconductors;indium compounds;laser theory;light polarisation;optical pumping;quantum well lasers;semiconductor device models;semiconductor optical amplifiers;

Study of the steady state and dynamical behavior of semiconductor optical amplifiers
A. Reale A. Carlo P. Lugli
Physica B, 272, pp. 513 - 17 (1999/12)
internal stresses;quantum well lasers;semiconductor optical amplifiers;semiconductor quantum wells;tight-binding calculations;

Theoretical study and simulation of electron dynamics in quantum cascade lasers
S. Tortora F. Compagnone A. Di Carlo P. Lugli M.T. Pellegrini M. Troccoli G. Scamarcio
Physica B: Condensed Matter, 272, pp. 219 - 222 (1999)
Semiconducting indium gallium arsenide;Semiconducting aluminum compounds;Electronic structure;Monte Carlo methods;Computer simulation;Electroluminescence;Semiconductor device models;

Tight-binding design of intersubband transitions in InGaAs/AlAs quantum heterostructures grown pseudomorphically on InP
J.-M. Jancu F. Beltram R. Scholz A. Di Carlo
Superlattices and Microstructures, 25, pp. 351 - 5 (1999)
aluminium compounds;gallium arsenide;III-V semiconductors;indium compounds;interface states;optical properties;semiconductor heterojunctions;tight-binding calculations;

A combined Monte Carlo and experimental analysis of light emission phenomena in AlGaAs/GaAs HBTs
A. Di Carlo P. Lugli C. Canali R. Malik M. Manfredi A. Neviani E. Zanoni G. Zandler
Semiconductor Science and Technology, 13, pp. 858 - 63 (1998/08)
aluminium compounds;conduction bands;electroluminescence;gallium arsenide;heterojunction bipolar transistors;hot carriers;impact ionisation;Monte Carlo methods;semiconductor heterojunctions;valence bands;

A generalized Monte Carlo approach for the analysis of quantum-transport phenomena in mesoscopic systems: interplay between coherence and relaxation
F. Rossi S. Ragazzi A. Di Carlo P. Lugli
VLSI Design, 8, pp. 197 - 202 (1998)
mesoscopic systems;Monte Carlo methods;semiconductor superlattices;

Broad spectrum two-wave mixing in BaTiO₃
M.B. Danailov A. Pecchia M. Laurito P. Apai
Conference on Lasers and Electro-Optics Europe - Technical Digest, , pp. 224 - (1998)
Crystals;Barium titanate;Photorefractive materials;Solid state lasers;Pumping (laser);Prisms;Optical phase conjugation;

Characterization of hole transport phenomena in AlGaAs-InGaAs HEMT's biased in impact-ionization regime
G. Meneghesso A. Di Carlo M. Manfredi M. Pavesi C. Canali E. Zanoni
56th Annual Device Research Conference Digest (Cat. No.98TH8373), , pp. 36 - 7 (1998)
aluminium compounds;electroluminescence;electron-hole recombination;fine structure;gallium arsenide;hole mobility;III-V semiconductors;impact ionisation;indium compounds;monochromators;power HEMT;semiconductor quantum wells;tight-binding calculations;