Publications

Static and dynamic screening of the polarization fields in nitride nanostructures: a theoretical and experimental study
A. Reale A. Di Carlo P. Lugli G. Traetta M. Lomascolo A. Passaseo R. Cingolani A. Bonfiglio M. Berti E. Napolitani M. Natali S.K. Sinha A.V. Drigo A. Vinattieri M. Colocci
Physica B, 314, pp. 35 - 8 (2002/03/11)
aluminium compounds;gallium compounds;III-V semiconductors;interface states;nanostructured materials;nonradiative transitions;photoluminescence;Poisson equation;Schrodinger equation;semiconductor quantum wells;time resolved spectra;wide band gap semiconductors;

Theoretical tools for transport in molecular nanostructures
A. Di Carlo M. Gheorghe P. Lugli M. Sternberg G. Seifert T. Frauenheim
Physica B, 314, pp. 86 - 90 (2002/03/11)
biomolecular electronics;carbon nanotubes;density functional theory;DNA;field effect transistors;Green's function methods;molecular electronics;nanotechnology;tight-binding calculations;

Tight-binding methods for transport and optical properties in realistic nanostructures
A. Di Carlo
Physica B, 314, pp. 211 - 19 (2002/03/11)
carrier mobility;density functional theory;interface states;organic semiconductors;semiconductor quantum wells;tight-binding calculations;

Tight-binding simulation of an InGaN/GaN quantum well with indium concentration fluctuation
J. Gleize A. Di Carlo J.M. Jancu R. Scholz O. Ambacher D. Gerthsen E. Hahn P. Lugli
Physica Status Solidi C, , pp. 298 - 301 (2002)
gallium compounds;III-V semiconductors;indium compounds;luminescence;nonradiative transitions;semiconductor quantum wells;spectral line shift;stress effects;tight-binding calculations;wide band gap semiconductors;

Transition from strong to weak coupling and the onset of lasing in semiconductor microcavities
R. Butte G. Delalleau A.I. Tartakovskii M.S. Skolnick V.N. Astratov J.J. Baumberg G. Malpuech A. Di Carlo A.V. Kavokin J.S. Roberts
Physical Review B (Condensed Matter and Materials Physics), 65, pp. 205310 - 1 (2002/05/15)
aluminium compounds;Boltzmann equation;excitons;gallium arsenide;III-V semiconductors;indium compounds;laser tuning;microcavity lasers;polaritons;semiconductor lasers;stimulated emission;

Ultralow threshold polariton lasing by electron cooling in doped microcavities
G. Malpuech J.J. Baumberg A. Kavokin A. Di Carlo
Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series, 74, pp. 58 - (2002)
Doping (additives);Electromagnetic wave scattering;Condensation;Hole traps;Laser theory;Kinetic theory;

Ultralow threshold polariton lasing by electron cooling in doped microcavities
G. Malpuech J.J. Baumberg A. Kavokin A. Di Carlo
Technical Digest. Summaries of papers presented at the Quantum Electronics and Laser Science Conference. Conference Edition (IEEE Cat. No.02CH37338), vol.1, pp. 58 (2002)
dispersion relations;electron gas;laser theory;microcavities;microcavity lasers;polaritons;semiconductor lasers;spontaneous emission;

Breakdown quenching in high electron mobility transistor by using body contact
A. Sleiman A. Di Carlo P. Lugli G. Zandler
IEEE Transactions on Electron Devices, 48, pp. 2188 - 91 (2001/10)
high electron mobility transistors;impact ionisation;Monte Carlo methods;semiconductor device breakdown;semiconductor device models;semiconductor device reliability;

Charge screening of polarization fields in nitride nanostructures
A. Di Carlo A. Reale
Physica Status Solidi B, 228, pp. 553 - 8 (2001/11/01)
carrier density;dielectric polarisation;electron-hole recombination;III-V semiconductors;nanostructured materials;oscillator strengths;piezoelectric semiconductors;wide band gap semiconductors;

Charge storage and screening of the internal field in GaN/AlGaN quantum wells
G. Traetta A. Di Carlo A. Reale P. Lugli M. Lomascolo A. Passaseo R. Cingolani A. Bonfiglio M. Berti E. Napolitani M. Natali S.K. Sinha A.V. Drigo
Journal of Crystal Growth, 230, pp. 492 - 6 (2001/09)
aluminium compounds;dielectric polarisation;gallium compounds;III-V semiconductors;interface states;photoluminescence;piezoelectric semiconductors;semiconductor quantum wells;wide band gap semiconductors;

Density-functional based tight-binding calculations on thiophene polymorphism
J. Widany G. Daminelli A. Di Carlo P. Lugli
VLSI Design, 13, pp. 393 - 7 (2001)
crystal structure;density functional theory;organic compounds;polymorphism;tight-binding calculations;total energy;

Efficient self-consistent pseudopotential calculation of nanostructured devices
F. Chirico A. Di Carlo P. Lugli
Physical Review B (Condensed Matter and Materials Physics), 64, pp. 045314 - 1 (2001/07/15)
nanostructured materials;Poisson equation;pseudopotential methods;SCF calculations;Schrodinger equation;semiconductor heterojunctions;wave functions;

Electronic band structure and intermolecular interaction in substituted thiophene polymorphs
J. Widany G. Daminelli A. Di Carlo P. Lugli G. Jungnickel M. Elstner Th. Frauenheim
Physical Review B (Condensed Matter and Materials Physics), 63, pp. 233204 - 1 (2001/06/15)
band structure;Brillouin zones;density functional theory;organic compounds;polymorphism;tight-binding calculations;total energy;wave functions;

Electronic transport in self-organised molecular nanostructured devices
A. Pecchia B. Movaghar R.W. Kelsall A. Bourlange S.D. Evans B.J. Hickey N. Boden
VLSI Design, 13, pp. 305 - 9 (2001)
electron traps;impurity scattering;molecular beam epitaxial growth;molecular electronics;nanotechnology;

Experimental and Monte Carlo analysis of near-breakdown phenomena in GaAs-based heterostructure FETs
A. Sleiman A. Di Carlo L. Tocca P. Lugli G. Zandler G. Meneghesso E. Zanoni C. Canali A. Cetronio M. Lanzieri M. Peroni
Semiconductor Science and Technology, 16, pp. 315 - 19 (2001/05)
aluminium compounds;electroluminescence;field effect transistors;gallium arsenide;high electron mobility transistors;III-V semiconductors;impact ionisation;indium compounds;Monte Carlo methods;

Format Conversion of Optical Data Using Four Wave Mixing in Semiconductor Optical Amplifiers
A. Reale, P. Lugli, S. Betti
IEEE J. Selected Topics in Quantum Electronics, pp. 703 (2001)
Format conversion, four-wave mixing, propagation, semiconductor optical amplifier.

Gain dynamics in traveling-wave semiconductor optical amplifiers
A. Reale A. Di Carlo P. Lugli
IEEE Journal of Selected Topics in Quantum Electronics, 7, pp. 293 - 9 (2001/03)
carrier mobility;laser theory;optical pumping;quantum well lasers;semiconductor device models;semiconductor optical amplifiers;

Mesoscopic-capacitor effect in GaN/Al_xGa_1-xN quantum wells: Effects on the electronic states
A. Di Carlo A. Reale P. Lugli G. Traetta M. Lomascolo A. Passaseo R. Cingolani A. Bonfiglio M. Berti E. Napolitani M. Natali S.K. Sinha A.V. Drigo A. Vinattieri M. Colocci
Physical Review B (Condensed Matter and Materials Physics), 63, pp. 235305 - 1 (2001/06/15)
aluminium compounds;electron-hole recombination;gallium compounds;ground states;III-V semiconductors;interface states;semiconductor quantum wells;wide band gap semiconductors;

Microscopic modeling of GaN-based heterostructures
F. Sacconi F. Della Sala A. Di Carlo P. Lugli
VLSI Design, 13, pp. 387 - 91 (2001)
effective mass;gallium compounds;high electron mobility transistors;III-V semiconductors;semiconductor device models;tight-binding calculations;wide band gap semiconductors;

Optical and electronic properties of GaN based heterostructures: a self-consistent time-dependent approach
A. Reale A. Di Carlo P. Lugli A. Kavokin
Physica Status Solidi A, 183, pp. 121 - 4 (2001/01/16)
aluminium compounds;electron-hole recombination;gallium compounds;III-V semiconductors;photoluminescence;SCF calculations;semiconductor quantum wells;time resolved spectra;wide band gap semiconductors;