Publications

Electron-optical-phonon interaction in the In_1-xGa_xAs/In_1-yAl_yAs superlattice
F. Compagnone A. Di Carlo P. Lugli
Physical Review B (Condensed Matter and Materials Physics), 65, pp. 125314 - 1 (2002/03/15)
aluminium compounds;eigenvalues and eigenfunctions;electron-phonon interactions;gallium arsenide;III-V semiconductors;indium compounds;interface phonons;Kronig-Penney model;phonon dispersion relations;semiconductor superlattices;

Exciton-electron scattering in semiconductor microcavities: tool for polariton lasing
A. Kavokin G. Malpuech A. Di Carlo J.J. Baumberg
Physica Status Solidi A, 190, pp. 725 - 30 (2002/04)
excitons;interface states;polaritons;quantum well lasers;semiconductor quantum wells;time resolved spectra;two-dimensional electron gas;

Full-band approaches for the quantum treatment of nanometer-scale MOS structures
F. Sacconi M. Povolotskyi A. Di Carlo P. Lugli M. Stadele C.G. Strahberger P. Vogl
Physica B, 314, pp. 345 - 9 (2002/03/11)
band structure;effective mass;elemental semiconductors;inversion layers;MIS structures;nanostructured materials;silicon;silicon compounds;tunnelling;

GaN-based modulation doped FETs and UV detectors
H. Morkoc A. Di Carlo R. Cingolani
Solid-State Electronics, 46, pp. 157 - 202 (2002/02)
gallium compounds;high electron mobility transistors;III-V semiconductors;semiconductor device noise;ultraviolet detectors;wide band gap semiconductors;

Hot electrons and hot phonons in quantum cascade lasers
F. Compagnone M. Manenti A. Di Carlo P. Lugli
Physica B, 314, pp. 336 - 40 (2002/03/11)
electron-phonon interactions;hot carriers;Monte Carlo methods;quantum well lasers;

Influence of carrier mobility and contact barrier height on the electrical characteristics of organic transistors
A. Bolognesi A. Di Carlo P. Lugli
Applied Physics Letters, 81, pp. 4646 - 8 (2002/12/09)
carrier mobility;MOSFET;organic semiconductors;Schottky barriers;semiconductor device models;thin film transistors;

Interactions of self-organised discotic liquid crystals with ultrathin metal films
A. Pecchia R.W. Kelsall B. Movaghar A. Bourlange S.D. Evans B.J. Hickey N. Boden
Materials Science and Technology, 18, pp. 729 - 32 (2002/07)
band structure;bonds (chemical);diffusion;discotic liquid crystals;gold;metallic thin films;

Modeling and experimental validation of current-induced gain saturated SOAs for ultrafast transmission
Antonella Bogoni, Luca Poti, Alessio Bizzi, Mirco Scaffardi, Andrea Reale
OFC 2002, ThGG68, pp. 707-709 (2002)

Modeling of GaN-based resonant tunneling diodes: influence of polarization fields
F. Sacconi A. Di Carlo P. Lugli
Physica Status Solidi A, 190, pp. 295 - 9 (2002/03)
aluminium compounds;conduction bands;gallium compounds;III-V semiconductors;resonant tunnelling diodes;semiconductor device models;tight-binding calculations;transfer function matrices;

Modeling of Semiconductor Optical Amplifiers
A. Reale, P. Lugli
Journal of Computational Electronics, pp. 129 (2002)
semiconductor optical amplifier, tight binding, polarization independence, cross gain modulation, four wave mixing, format conversion

Monte Carlo description of exciton dynamics in GaN
F. Compagnone G. Kokolakis A. Di Carlo P. Lugli
Physica Status Solidi A, 190, pp. 141 - 7 (2002/03)
gallium compounds;III-V semiconductors;Monte Carlo methods;phonon-exciton interactions;time resolved spectra;wide band gap semiconductors;

Monte Carlo simulation of electron dynamics in superlattice quantum cascade lasers
F. Compagnone A. Di Carlo P. Lugli
Applied Physics Letters, 80, pp. 920 - 2 (2002/02/11)
aluminium compounds;electron-phonon interactions;gallium arsenide;III-V semiconductors;indium compounds;laser modes;laser theory;Monte Carlo methods;photoluminescence;quantum well lasers;semiconductor device models;semiconductor superlattices;

Novel extended SOAs model for applications in very high-speed systems
A. Bogoni, L. Poti, A. Bizzi, M. Scaffardi, A. Reale
IEEE Photonics Technology Letter, 14, pp. 905 (2002)
Gain recovery, optoelectronic devices, semiconductor optical amplifier (SOA) modeling.

Organic and inorganic nanostructures: an atomistic point of view
A. Di Carlo
Physica Status Solidi B, 232, pp. 5 - 12 (2002/07)
density functional theory;interface states;nanostructured materials;organic semiconductors;pseudopotential methods;tight-binding calculations;

Photoconductive transients and one-dimensional charge carrier dynamics in discotic liquid crystals
A. Pecchia O.R. Lozman B. Movaghar N. Boden R.J. Bushby K.J. Donovan T. Kreouzis
Physical Review B (Condensed Matter and Materials Physics), 65, pp. 104204 - 1 (2002/03/01)
carrier relaxation time;discotic liquid crystals;hole mobility;hole traps;one-dimensional conductivity;organic semiconductors;photoconductivity;wide band gap semiconductors;

Physica Status Solidi (A) Applied Research: Preface
Aldo Di Carlo Alexey Kavokin
Physica Status Solidi (A) Applied Research, 190, pp. 3 - (2002)

Polariton lasing by exciton-electron scattering in semiconductor microcavities
G. Malpuech A. Kavokin A. Di Carlo J.J. Baumberg
Physical Review B (Condensed Matter and Materials Physics), 65, pp. 153310 - 1 (2002/04/15)
excitons;polaritons;quantum well lasers;time resolved spectra;

Polariton lasing due to the exciton-electron scattering in semiconductor microcavities
G. Malpuech A. Kavokin A. Di Carlo J.J. Baumberg F. Compagnone P. Lugli M. Zamfirescu
Physica Status Solidi A, 190, pp. 181 - 6 (2002/03)
excitons;interface states;microcavity lasers;polaritons;semiconductor quantum wells;time resolved spectra;

Resonant and nonresonant dynamics of excitons and free carriers in GaN/AlGaN quantum wells
A. Vinattieri D. Alderighi J. Kudrna M. Colocci A. Reale A. Di Carlo P. Lugli F. Semond N. Grandjean J. Massies
Physica Status Solidi A, 190, pp. 87 - 92 (2002/03)
aluminium compounds;electron-hole recombination;excitons;gallium compounds;III-V semiconductors;photoluminescence;Poisson equation;Schrodinger equation;semiconductor quantum wells;time resolved spectra;wide band gap semiconductors;

Room-temperature polariton lasers based on GaN microcavities
G. Malpuech A. Di Carlo A. Kavokin J.J. Baumberg M. Zamfirescu P. Lugli
Applied Physics Letters, 81, pp. 412 - 14 (2002/07/15)
aluminium compounds;Boltzmann equation;Bose-Einstein condensation;excitons;gallium compounds;III-V semiconductors;microcavity lasers;polaritons;quantum well lasers;semiconductor device models;semiconductor quantum wells;wide band gap semiconductors;