Publications

Factors limiting the maximum operating voltage of microwave devices
E. Zanoni G. Meneghesso A. Di Carlo P. Lugli L. Rossi
International Journal of High Speed Electronics and Systems, 10, pp. 119 - 28 (2000/03)
ageing;electroluminescence;gallium arsenide;high electron mobility transistors;hot carriers;III-V semiconductors;impact ionisation;indium compounds;microwave field effect transistors;Monte Carlo methods;semiconductor device breakdown;semiconductor device measurement;semiconductor device models;semiconductor device reliability;

Influence of internal electric fields on the ground level emission of GaN/AlGaN multi-quantum wells
A. Bonfiglio M. Lomascolo G. Traetta R. Cingolani A. Di Carlo F. Della Sala P. Lugli A. Botchkarev H. Morkoc
MRS Internet Journal of Nitride Semiconductor Research, 5, pp. 6 - (2000)
Gallium;Electric fields;Molecular beam epitaxy;Cryostats;X ray diffraction;Electronic structure;Fermi level;Electrons;Heterojunctions;Mathematical models;Optimization;

Influence of internal electric fields on the ground level emission of GaN/AlGaN multi-quantum wells
A. Bonfiglio M. Lomascolo G. Traetta R. Cingolani A. Di Carlo F. Della Sala P. Lugli A. Botchkarev H. Morkoc
Materials Research Society Symposium - Proceedings, 595, pp. 12 - 6 (2000)
Semiconducting gallium compounds;Semiconducting aluminum compounds;Electric fields;Emission spectroscopy;Mathematical models;Interfaces (materials);Molecular beam epitaxy;Substrates;Chemical cleaning;Semiconductor device structures;

Influence of internal electric fields on the ground level emission of GaN/AlGaN multi-quantum wells
A. Bonfiglio M. Lomascolo G. Traetta R. Cingolani A. Di Carlo F. Della Sala P. Lugli A. Botchkarev H. Morkoc
GaN and Related Alloys - 1999. Symposium (Materials Research Society Symposium Proceedings Vol.595), , pp. 12 - 6 (2000)
aluminium compounds;crystal field interactions;electric fields;gallium compounds;III-V semiconductors;internal stresses;photoluminescence;SCF calculations;semiconductor quantum wells;semiconductor superlattices;shielding;tight-binding calculations;wide band gap semiconductors;

Many-body effects on excitons properties in GaN/AlGaN quantum wells
G. Traetta R. Cingolani A. Di Carlo F. Della Sala P. Lugli
Applied Physics Letters, 76, pp. 1042 - 4 (2000/02/21)
absorption coefficients;aluminium compounds;dielectric polarisation;excitons;gallium compounds;Green's function methods;III-V semiconductors;optical saturable absorption;oscillator strengths;piezoelectric semiconductors;semiconductor quantum wells;tight-binding calculations;wave functions;wide band gap semiconductors;

Mesoscopic capacitor effect in GaN/AlGaN quantum wells
M. Lomascolo G. Traetta A. Passaseo A. Pomarico R. Cingolani A. Di Carlo P. Lugli A. Bonfiglio Berti E. Napolitani S.K. Sinha A.V. Drigo
Proceedings of International Workshop on Nitride Semiconductors, , pp. 614 - 17 (2000)
aluminium compounds;capacitance;dielectric polarisation;electron-hole recombination;gallium compounds;III-V semiconductors;interface states;mesoscopic systems;nonradiative transitions;piezoelectric semiconductors;semiconductor quantum wells;wide band gap semiconductors;

Microscopic modeling of GaN-based heterostructures
F. Sacconi F. Della Sala A. Di Carlo P. Lugli
7th International Workshop on Computational Electronics. Book of Abstracts. IWCE (Cat. No.00EX427), , pp. 136 - 7 (2000)
gallium compounds;III-V semiconductors;semiconductor heterojunctions;semiconductor quantum wells;wide band gap semiconductors;

Modeling of GaN-based heterostructure devices
F. Sacconi A. Di Carlo F. Della Sala P. Lugli
GAAS 2000. Conference Proceedings, , pp. 4 (2000)
aluminium compounds;gallium compounds;III-V semiconductors;microwave field effect transistors;microwave power transistors;Poisson equation;power HEMT;Schrodinger equation;semiconductor device models;wide band gap semiconductors;

Monte Carlo study of the dynamic breakdown effects in HEMT's
A. Di Carlo L. Rossi P. Lugli G. Zandler G. Meneghesso M. Jackson E. Zanoni
IEEE Electron Device Letters, 21, pp. 149 - 51 (2000/04)
high electron mobility transistors;impact ionisation;Monte Carlo methods;semiconductor device breakdown;semiconductor device models;

Optical and transport properties of GaN/Al_0.15Ga_0.85N quantum wells
M. Lomascolo G. Traetta A. Passaseo M. Longo D. Cannoletta R. Cingolani A. Bonfiglio F. Sala A. Carlo P. Lugli M. Natali S.K. Sinha M. Berti A.V. Drigo H. Botchkarev H. Morkoc
Physica Status Solidi A, 178, pp. 73 - 8 (2000/03/16)
aluminium compounds;gallium compounds;III-V semiconductors;interface states;internal stresses;photoconductivity;photoluminescence;semiconductor quantum wells;vacancies (crystal);wide band gap semiconductors;

Photonic Bloch oscillations in laterally confined Bragg mirrors
A. Kavokin G. Malpuech A. Di Carlo P. Lugli F. Rossi
Physical Review B (Condensed Matter), 61, pp. 4413 - 16 (2000/02/15)
Bragg gratings;digital simulation;elemental semiconductors;high-speed optical techniques;mirrors;photonic band gap;porous semiconductors;semiconductor superlattices;silicon;

Polarization grating in semiconductor films induced by exciton-polaritons
A.V. Kavokin G. Malpuech M. Vladimirova A. Carlo P. Lugli F. Rossi
Physica Status Solidi A, 178, pp. 581 - 5 (2000/03/16)
excitons;gallium arsenide;III-V semiconductors;light polarisation;light propagation;Maxwell equations;polaritons;semiconductor thin films;time resolved spectra;

Quantum transport with the generalized Monte Carlo approach: the effect of non-diagonal injection
R.P. Zaccaria F. Rossi A. Di Carlo P. Lugli
7th International Workshop on Computational Electronics. Book of Abstracts. IWCE (Cat. No.00EX427), , pp. 135 - (2000)
Monte Carlo methods;quantum interference phenomena;semiconductor device models;

Self-consistent full-band modeling of quantum semiconductor nanostructures
F. Chirico A. Di Carlo P. Lugli
7th International Workshop on Computational Electronics. Book of Abstracts. IWCE (Cat. No.00EX427), , pp. 39 - 40 (2000)
pseudopotential methods;semiconductor device models;

Semiconductor nanostructures
A. Di Carlo
Physica Status Solidi B, 217, pp. 703 - 22 (2000/01/01)
ab initio calculations;band structure;nanostructured materials;optical properties;semiconductor quantum wells;semiconductor quantum wires;semiconductor superlattices;tight-binding calculations;

Spontaneous polarization and piezoelectric field in GaN/Al_0.15Ga_0.85N quantum wells: Impact on the optical spectra
R. Gingolani A. Botchkarev H. Tang H. Morkoc G. Traetta G. Coli M. Lomascolo A. Di Carlo F.D. Sala P. Lugli
Physical Review B (Condensed Matter), 61, pp. 2711 - 15 (2000/01/15)
aluminium compounds;dielectric polarisation;electro-optical effects;excitons;gallium compounds;III-V semiconductors;photoluminescence;piezoelectricity;red shift;semiconductor quantum wells;

Tailoring the breakdown voltage in high electron mobility transistor: theoretical and experimental results
A. Sleiman A. Di Carlo L. Tocca R. Fiordiponti P. Lugli G. Zandler
GAAS 2000. Conference Proceedings, , pp. 4 (2000)
gallium arsenide;high electron mobility transistors;hole density;III-V semiconductors;impact ionisation;Monte Carlo methods;ohmic contacts;semiconductor device breakdown;semiconductor device models;

Theoretical study, modeling and simulation of SL quantum cascade lasers
S. Tortora F. Compagnone A. Di Carlo P. Lugli
Physica E, 7, pp. 20 - 4 (2000/04)
aluminium compounds;electroluminescence;gallium arsenide;III-V semiconductors;indium compounds;Kronig-Penney model;laser beams;laser theory;Monte Carlo methods;quantum well lasers;semiconductor superlattices;

Well-width dependence of the ground level emission of GaN/AlGaN quantum wells
A. Bonfiglio M. Lornascolo G. Traetta R. Cingolani A. Di Carlo F. Della Sala P. Lugli A. Botchkarev H. Morkoc
Journal of Applied Physics, 87, pp. 2289 - 92 (2000/03/01)
aluminium compounds;gallium compounds;ground states;III-V semiconductors;interface states;interface structure;internal stresses;photoluminescence;SCF calculations;semiconductor quantum wells;tight-binding calculations;wide band gap semiconductors;

AlN and GaN epitaxial heterojunctions on 6H-SiC(0001): Valence band offsets and polarization fields
A. Rizzi R. Lantier F. Monti H. Luth F.D. Sala A. Di Carlo P. Lugli
Journal of Vacuum Science & Technology B (Microelectronics and Nanometer Structures), 17, pp. 1674 - 81 (1999/07)
aluminium compounds;core levels;dielectric polarisation;gallium compounds;III-V semiconductors;piezoelectric semiconductors;semiconductor epitaxial layers;semiconductor heterojunctions;surface states;tight-binding calculations;valence bands;wide band gap semiconductors;X-ray photoelectron spectra;