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THE NANO OPTOELECTRONICS GROUP

Publications


Found 638 publications.

Page 28 of 32

2001

ARTICLES

Photoluminescence efficiency of substituted quaterthiophene crystals
G. Gigli F. Della Sala M. Lomascolo M. Anni G. Barbarella A. Di Carlo P. Lugli R. Cingolani
Physical Review Letters, 86, pp. 167 - 70 (2001/01/01)
molecular configurations;nonradiative transitions;organic compounds;photoluminescence;

Propagation and scattering of exciton-polaritons in nitride-based multiple quantum wells
Guillaume Malpuech Marian Zamfirescu Alexey Kavokin Aldo Di Carlo
Materials Research Society Symposium - Proceedings, 639, pp. 9 - 9 (2001)
Light propagation;Light scattering;Semiconductor quantum wells;Nitrides;

Propagation and scattering of exciton-polaritons in nitride-based multiple quantum wells
G. Malpuech M. Zamfirescu A. Kavokin A. Di Carlo
GaN and Related Alloys - 2000. Symposium (Materials Research Society Symposium Proceedings Vol.639), , pp. 9 - 9 (2001)
aluminium compounds;excitons;gallium compounds;III-V semiconductors;light coherence;light scattering;polaritons;semiconductor quantum wells;time resolved spectra;wide band gap semiconductors;

Quasi two-dimensional modeling of GaN-based MODFETs
F. Sacconi A. Di Carlo P. Lugli H. Morkoc
Physica Status Solidi A, 188, pp. 251 - 4 (2001/11/16)
aluminium compounds;effective mass;field effect transistors;gallium compounds;III-V semiconductors;Poisson equation;Schrodinger equation;semiconductor device models;wide band gap semiconductors;

Recombination dynamics in GaN/AlGaN quantum wells: the role of built-in fields
D. Alderighi A. Vinattieri J. Kudrna M. Colocci A. Reale G. Kokolakis A. Di Carlo P. Lugli F. Semond N. Grandjean J. Massies
Physica Status Solidi A, 188, pp. 851 - 5 (2001/11/23)
aluminium compounds;electron-hole recombination;gallium compounds;III-V semiconductors;photoluminescence;Poisson equation;Schrodinger equation;semiconductor quantum wells;time resolved spectra;wide band gap semiconductors;

Scanning tunneling current-voltage spectroscopy on poly(p-phenylene vinylene) films: A nanoscale probe for the electronic conduction
R. Rinaldi R. Cingolani K.M. Jones A.A. Baski H. Morkoc A. Di Carlo J. Widany F.D. Sala P. Lugli
Physical Review B (Condensed Matter), 63, pp. 075311 - 1 (2001/02/15)
Fermi level;organic semiconductors;polymer films;scanning tunnelling spectroscopy;

Self-consistent full-band modeling of quantum semiconductor nanostructures
F. Chirico A. Di Carlo P. Lugli
VLSI Design, 13, pp. 91 - 5 (2001)
elemental semiconductors;high electron mobility transistors;integration;interface states;iterative methods;MIS structures;Poisson equation;pseudopotential methods;SCF calculations;Schrodinger equation;silicon;silicon compounds;wave functions;

Simulation of optoelectronic devices
P. Lugli F. Compagnone A. Di Carlo A. Reale
VLSI Design, 13, pp. 23 - 36 (2001)
laser theory;Monte Carlo methods;optoelectronic devices;quantum well lasers;semiconductor device models;semiconductor optical amplifiers;simulation;

Spontaneous and piezoelectric polarization effects on the output characteristics of AlGaN/GaN heterojunction modulation doped FETs
F. Sacconi A. Di Carlo P. Lugli H. Morkoc
IEEE Transactions on Electron Devices, 48, pp. 450 - 7 (2001/03)
aluminium compounds;carrier density;dielectric polarisation;gallium compounds;III-V semiconductors;microwave field effect transistors;microwave power transistors;piezoelectric semiconductors;Poisson equation;power HEMT;Schrodinger equation;semiconductor device models;wide band gap semiconductors;

Theory of photon Bloch oscillations in photonic crystals
G. Malpuech A. Kavokin G. Panzarini A. Di Carlo
Physical Review B (Condensed Matter), 63, pp. 035108 - 1 (2001/01/15)
elemental semiconductors;III-V semiconductors;mirrors;oscillations;photonic band gap;porous semiconductors;silicon;

Tuning optical properties of GaN-based nanostructures by charge screening
A. Di Carlo
Physica Status Solidi A, 183, pp. 81 - 5 (2001/01/16)
gallium compounds;III-V semiconductors;nanostructured materials;optical properties;oscillator strengths;semiconductor doping;wide band gap semiconductors;

Tuning the optical properties of thiophene oligomers toward infrared emission: A theoretical study
G. Daminelli J. Widany A. Di Carlo P. Lugli
Journal of Chemical Physics, 115, pp. 4919 - 23 (2001/09/08)
density functional theory;HF calculations;INDO calculations;infrared spectra;organic compounds;red shift;spectral line shift;tight-binding calculations;

2000

ARTICLES

Conductivity of two-dimensional metal-organic hybrid films
A. Pecchia B. Movaghar R.W. Kelsall A. Bourlange S. Evans M. Howson T. Shen N. Boden
Microelectronic Engineering, 51-52, pp. 633 - 44 (2000/05)
electrical conductivity;liquid crystals;metallic epitaxial layers;multilayers;organic compounds;self-assembly;surface conductivity;surface scattering;

Density-functional based tight-binding calculations on thiophene polymorphism
J. Widany G. Daminelli A. Di Carlo P. Lugli
7th International Workshop on Computational Electronics. Book of Abstracts. IWCE (Cat. No.00EX427), , pp. 138 - 9 (2000)
density functional theory;electronic structure;organic compounds;polymorphism;tight-binding calculations;

Doping screening of polarization fields in nitride heterostructures
A. Di Carlo F. Della Sala P. Lugli V. Fiorentini F. Bernardini
Applied Physics Letters, 76, pp. 3950 - 2 (2000/06/26)
electron-hole recombination;light polarisation;photoluminescence;radiative lifetimes;semiconductor doping;semiconductor quantum wells;spectral line shift;tight-binding calculations;wide band gap semiconductors;

Effects of the spontaneous polarization and piezoelectric fields on the luminescence spectra of GaN/Al0.15Ga0.85N quantum wells
G. Traetta A. Passaseo M. Longo D. Cannoletta R. Cingolani M. Lomascolo A. Bonfiglio A. Di Carlo F. Della Sala P. Lugli A. Botchkarev H. Morkoc
Physica E: Low-Dimensional Systems and Nanostructures, 7, pp. 929 - 933 (2000)
Semiconducting gallium compounds;Semiconducting aluminum compounds;Polarization;Piezoelectricity;Electron transitions;Nitrides;Luminescence of inorganic solids;

Electronic transport in self-organised molecular nanostructure devices
A. Pecchia B. Movaghar R.W. Kelsall A. Bourlange S. Evans B. Hickey N. Boden
7th International Workshop on Computational Electronics. Book of Abstracts. IWCE (Cat. No.00EX427), , pp. 104 - 5 (2000)
electrical conductivity;molecular electronics;nanotechnology;self-assembly;

Excited state electronic interactions in oligothiophenes with novel supramolecular structure
R. Tubino A. Borghesi A. Sassella C. Botta W. Porzio F. Della Sala A. Di Carlo P. Lugli
Materials Research Society Symposium - Proceedings, 598, pp. 3 - 48 (2000)
Molecular structure;Electron energy levels;Molecular beams;Deposition;Thin films;Epitaxial growth;X ray diffraction analysis;Light transmission;Optical properties;Anisotropy;

Excited state electronic interactions in oligothiophenes with novel supramolecular structure
R. Tubino A. Borghesi A. Sassella C. Botta W. Porzio F.D. Sala A. Di Carlo P. Lugli
Electrical, Optical, and Magnetic Properties of Organic Solid-State Materials V. Symposium (Materials Research Society Proceedings Vol.598), , pp. 3 - 48 (2000)
excited states;molecular beam epitaxial growth;molecular electronic states;organic semiconductors;photoemission;semiconductor epitaxial layers;visible spectra;X-ray diffraction;

Exciton dynamics and valence band mixing in tensile-strained semiconductor quantum wells
E. Perez L. Vina E.S. Koteles K.M. Lau A. Di Carlo P. Lugli
Semiconductor Science and Technology, 15, pp. 189 - 96 (2000/02)
band structure;excitons;gallium arsenide;gallium compounds;III-V semiconductors;interface states;semiconductor quantum wells;valence bands;

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