Publications

Evaluation of the Gauge Factor for membranes assembled by single-walled Carbon nanotubes
A Reale, P. Regoliosi, L.Tocca, P.Lugli, S.Orlanducci, M.L.Terranova and G.Bruni
Appl. Phys. Lett. Volume 85 No. 14 and Virtual Journal of Nanoscale Science & Technology, Vol. 10, n.17, Ottobre 2004, pp. 2812-2814 (2004)
carbon nanotubes, piezoresistivity, gauge factor, membranes

Exciton interaction with piezoelectric and polar optical phonons in bulk wurtzite GaN
G. Kokolakis J. Gleize A. Di Carlo P. Lugli
Semiconductor Science and Technology, 19, pp. 460 - 2 (2004/04)
electron-phonon interactions;gallium compounds;III-V semiconductors;phonon-exciton interactions;piezoelectric semiconductors;wide band gap semiconductors;

Forster energy transfer from poly(arylene-ethynylene)s to an erbium-porphyrin complex
R. Pizzoferrato L. Lagonigro T. Ziller A. Di Carlo R. Paolesse F. Mandoj A. Ricci C. Lo Sterzo
Chemical Physics, 300, pp. 217 - 25 (2004/05/10)
fluorescence;infrared spectra;organic compounds;polymer blends;radiation quenching;

Full band approach to tunneling in MOS structures
F. Sacconi A. Di Carlo P. Lugli M. Stadele J.-M. Jancu
IEEE Transactions on Electron Devices, 51, pp. 741 - 8 (2004/05)
MOS capacitors;tight-binding calculations;tunnelling;

Full-band approaches to the electronic properties of nanometer-scale MOS structures
F. Sacconi M. Povolotskyi A. Di Carlo P. Lugli M. Stadele
Solid-State Electronics, 48, pp. 575 - 80 (2004/04)
conduction bands;current density;effective mass;MIS structures;MOS capacitors;MOSFET;semiconductor device models;semiconductor heterojunctions;silicon;silicon compounds;tight-binding calculations;tunnelling;

In-plane resistance of an ultra thin gold film: Influence of a copper phthalocyanine overlayer
A. Bourlange B.J. Hickey S.D. Evans A. Pecchia B. Movaghar R.W. Kelsall N. Boden
Molecular Crystals and Liquid Crystals, 413, pp. 812217-902226 (2004)
Gold;Metallic films;Copper compounds;Substrates;Electric resistance;Electronic properties;

Incoherent electron-phonon scattering in octanethiols
A. Pecchia A. Di Carlo A. Gagliardi S. Sanna T. Frauenheim R. Gutierrez
Nano Letters, 4, pp. 2109 - 14 (2004/11)
ab initio calculations;density functional theory;electrical contacts;electron-phonon interactions;gold;Green's function methods;molecular electronics;organic compounds;tunnelling;vibrational modes;

Non-equilibrium electronic distribution within one period of InP-based quantum cascade lasers
G. Scarpa P. Lugli N. Ulbrich G. Abstreiter M.-C. Amann M. Manenti F. Compagnone A. Di Carlo
Semiconductor Science and Technology, 19, pp. 342 - 4 (2004/04)
electron-phonon interactions;III-V semiconductors;indium compounds;laser theory;Monte Carlo methods;population inversion;quantum cascade lasers;semiconductor device measurement;semiconductor device models;

Non-linear optical properties of InGaAs/AlGaAs nanostructures grown on (N11) surfaces
M. Povolotskyi J. Gleize A. Di Carlo P. Lugli S. Birner P. Vogl D. Alderighi M. Gurioli A. Vinattieri M. Colocci S. Sanguinetti R. Notzel
Semiconductor Science and Technology, 19, pp. 351 - 3 (2004/04)
excitons;gallium arsenide;III-V semiconductors;indium compounds;interface states;nanostructured materials;nonlinear optics;photoluminescence;piezoelectricity;semiconductor quantum dots;semiconductor quantum wells;time resolved spectra;

Optical clock recovery from 10-Gb/s NRZ signal
S. Betti, C. Bulli, F. Curti, E. Duca, S. Persia, A. Reale, G. M. Tosi-Beleffi
Microwave and Optical Technology Letters, v.42, n.6, pp. 435-437 (2004)
clock recovery; semiconductor optical amplifier (SOA); nonreturn-to-zero (NRZ)

Optical far-IR wave generation - state-of-the-art and advanced device structures
V. Krozer B. Leone H.G. Roskos T. Loffler G. Loata G.H. Dohler F. Renner S. Eckardt S. Malzer A. SchwanhauBer T.O. Klaassen A. Adam P. Lugli A. Di Carlo M. Manenti G. Scamarcio M.S. Vitiello M. Feiginov
Proceedings of the SPIE - The International Society for Optical Engineering, 5466, pp. 178 - 92 (2004)
microwave photonics;submillimetre wave generation;submillimetre wave lasers;

Organic/metal interfaces: an ab initio study of their structural and electronic properties
S. Picozzi A. Pecchia M. Gheorghe A. Di Carlo P. Lugli B. Delley M. Elstner
Surface Science, 566-568, pp. 628 - 32 (2004/09/20)
ab initio calculations;adsorption;aluminium;binding energy;density functional theory;electronic density of states;interface structure;organic compounds;

Piezoresistive behaviour of single wall carbon nanotubes
P. Regoliosi A. Reale A. Di Carlo S. Orlanducci M.L. Terranova P. Lugli
2004 4th IEEE Conference on Nanotechnology (IEEE Cat. No.04TH8757), , pp. 149 - 51 (2004)
carbon nanotubes;deformation;electrical conductivity;membranes;piezoresistance;pressure sensors;strain sensors;

Polarization field effects on the recombination dynamics in low-In-content InGaN multi-quantum wells
F. Rossi N. Armani C. Ferrari L. Lazzarini A. Vinattieri M. Colocci A. Reale A. Di Carlo V. Grillo
Superlattices and Microstructures, 36, pp. 615 - 24 (2004/10)
cathodoluminescence;gallium compounds;high-speed optical techniques;III-V semiconductors;indium compounds;photoluminescence;Poisson equation;Schrodinger equation;semiconductor quantum wells;Stark effect;

Quantum capacitance effects in carbon nanotube field-effect devices
Luca Latessa Alessandro Pecchia Aldo Di Carlo Paolo Lugli
2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts, , pp. 73 - 74 (2004)
Field effect transistors;Quantum theory;Capacitance;Nanostructured materials;MOSFET devices;Transport properties;Poisson distribution;Dielectric devices;Green's function;

Quantum capacitance effects in carbon nanotube field-effect devices
L. Latessa A. Pecchia A. Di Carlo P. Lugli
2004 10th International Workshop on Computational Electronics (IEEE Cat. No.04EX915), , pp. 73 - 4 (2004)
ab initio calculations;capacitance;carbon nanotubes;field effect transistors;Green's function methods;MOSFET circuits;quantum theory;

Recombination dynamics in InGaN/GaN quantum wells: role of the piezoelectric field versus carrier localization
A. Vinattieri M. Colocci F. Rossi C. Ferrari N. Armani G. Salviati A. Reale A. Di Carlo P. Lugli V. Grillo
Physica Status Solidi C, , pp. 1397 - 402 (2004)
carrier density;cathodoluminescence;gallium compounds;III-V semiconductors;indium compounds;photoluminescence;piezoelectricity;semiconductor quantum wells;time resolved spectra;wide band gap semiconductors;

Simulation of carbon nanotube field-effect devices
Luca Latessa Alessandro Pecchia Aldo Di Carlo Giuseppe Scarpa Paolo Lugli
2004 4th IEEE Conference on Nanotechnology, , pp. 10 - 12 (2004)
Carbon nanotubes;Green's function;Electrostatics;MOSFET devices;Quantum theory;Capacitance;Band structure;Hamiltonians;Matrix algebra;Computer simulation;

Simulation of carbon nanotube field-effect devices
L. Latessa A. Pecchia A. Di Carlo G. Scarpa P. Lugli
2004 4th IEEE Conference on Nanotechnology (IEEE Cat. No.04TH8757), , pp. 10 - 12 (2004)
ab initio calculations;carbon nanotubes;density functional theory;Green's function methods;MOSFET;nanotube devices;Poisson equation;semiconductor device models;semiconductor materials;tight-binding calculations;

Single wall carbon nanotube based aggregates and their electrical characterization
M. Berliocchi S. Orlanducci A. Reale P. Regoliosi A. Di Carlo P. Lugli M.L. Terranova F. Brunetti G. Bruni M. Cirillo
Synthetic Metals, 145, pp. 171 - 6 (2004/09/21)
aggregates (materials);carbon nanotubes;electrophoresis;membranes;self-assembly;